SMG2306A MOSFET. Datasheet pdf. Equivalent
Type Designator: SMG2306A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.5 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SC59
SMG2306A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SMG2306A Datasheet (PDF)
smg2306a.pdf
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SMG2306A 5 A, 30 V, RDS(ON) 35 m N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A is universally used for all co
smg2306n.pdf
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SMG2306N 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal ALpower loss and conserves energy, making this device 33ideal for use in
smg2306ne.pdf
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SMG2306NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize ALHigh Cell Density process. Low RDS(on) assures 33minimal power loss and conserves energy, making Top View C Bthis device i
smg2305.pdf
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SMG2305-4.2A, -20V,RDS(ON) 65mElektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of -C specifies halogen & lead-freeDescriptionSC-59ADim Min MaxThe SMG2305 provide the designer with the best Lcombination of fast switching, low on-resistance A 2.70 3.103and cost-effectiveness. B 1.40 1.60SBTop View2 1
smg2302.pdf
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SMG23023.2A, 20V,RDS(ON) 85m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSC-59ADim Min MaxDescription LA 2.70 3.103B 1.40 1.60SBTop ViewThe SMG2302 provide the designer with the best 2 1C 1.00 1.30Combination of fast switching, low on-resistance D 0.35 0.50and
smg2305p.pdf
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SMG2305P -4.5A , -20V , RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to Lensure minimal power loss and heat dissipation. 33Top
smg2305pe.pdf
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SMG2305PE -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ALensure minimal power loss and heat dissipation. Typical 33applicat
smg2301p.pdf
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SMG2301P -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure ALminimal power loss and heat dissipation.Typical applications 33
smg2301.pdf
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SMG2301-2.6A, -20V,RDS(ON) 130m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of "-C" specifies halogen & RoHS compliantSC-59ADim Min MaxDescription LA 2.70 3.103B 1.40 1.60The SMG2301 is universally preferred for all commercial SBTop View2 1C 1.00 1.30industrial surface mount application and suited for l
smg2302n.pdf
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SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ALensure minimal power loss and heat dissipation. Typical 33app
smg2305l.pdf
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FM120-M WILLASSMG2305LTHRUP-Channel Enhancement Mode Power Mos.FETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better rDescriptioneverse leakage current and thermal resistance. SOD-123HSC-59 Low profile surface mounted applic
Datasheet: SMG1330N , SMG2301 , SMG2301P , SMG2302 , SMG2302N , SMG2305 , SMG2305P , SMG2305PE , 10N60 , SMG2306N , SMG2306NE , SMG2310A , SMG2310N , SMG2314N , SMG2314NE , SMG2318N , SMG2319P .