SMG2306A Specs and Replacement
Type Designator: SMG2306A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SC59
SMG2306A substitution
- MOSFET ⓘ Cross-Reference Search
SMG2306A datasheet
smg2306a.pdf
SMG2306A 5 A, 30 V, RDS(ON) 35 m N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A is universally used for all co... See More ⇒
smg2306n.pdf
SMG2306N 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal A L power loss and conserves energy, making this device 3 3 ideal for use in... See More ⇒
smg2306ne.pdf
SMG2306NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize A L High Cell Density process. Low RDS(on) assures 3 3 minimal power loss and conserves energy, making Top View C B this device i... See More ⇒
smg2305.pdf
SMG2305 -4.2A, -20V,RDS(ON) 65m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of -C specifies halogen & lead-free Description SC-59 A Dim Min Max The SMG2305 provide the designer with the best L combination of fast switching, low on-resistance A 2.70 3.10 3 and cost-effectiveness. B 1.40 1.60 S B Top View 2 1 ... See More ⇒
Detailed specifications: SMG1330N, SMG2301, SMG2301P, SMG2302, SMG2302N, SMG2305, SMG2305P, SMG2305PE, IRFB4110, SMG2306N, SMG2306NE, SMG2310A, SMG2310N, SMG2314N, SMG2314NE, SMG2318N, SMG2319P
Keywords - SMG2306A MOSFET specs
SMG2306A cross reference
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SMG2306A substitution
SMG2306A replacement
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