SMG2314NE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMG2314NE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
Paquete / Cubierta: SC59
Búsqueda de reemplazo de SMG2314NE MOSFET
SMG2314NE Datasheet (PDF)
smg2314ne.pdf

SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and ALconserves energy, making this device ideal for use in power
smg2314n.pdf

SMG2314N 5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs Autilize a high cell density trench process to provide low L3RDS(ON) and to ensure minimal power loss and heat dissipation. 3Top View C
smg2318n.pdf

SMG2318N 1.2 A, 30 V, RDS(ON) 160 m N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ALensure minimal power loss and heat dissipation. 33T
smg2310a.pdf

SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 m Elektronische Bauelemente sRoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTIONS AThe SMG2310A utilized advanced processing techniques to achieve the Llowest possible on-resistance, extremely efficient and cost-effectiveness 33device. The SMG2310A is univers
Otros transistores... SMG2305P , SMG2305PE , SMG2306A , SMG2306N , SMG2306NE , SMG2310A , SMG2310N , SMG2314N , IRFB4227 , SMG2318N , SMG2319P , SMG2321P , SMG2322N , SMG2325P , SMG2326N , SMG2327P , SMG2328 .
History: SI2323DS-T1 | TPC8046-H | AOCR33105E | AO4708 | SSRF4N60 | SI4N60L-TM3-T | SML30B48
History: SI2323DS-T1 | TPC8046-H | AOCR33105E | AO4708 | SSRF4N60 | SI4N60L-TM3-T | SML30B48



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