SMG2314NE - параметры транзистора MOSFET, его аналоги, datasheet

SMG2314NE Datasheet (PDF)

..1. Size:139K secos
smg2314ne.pdf pdf_icon

SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and ALconserves energy, making this device ideal for use in power

6.1. Size:626K secos
smg2314n.pdf pdf_icon

SMG2314N 5.3A , 20V , RDS(ON) 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs Autilize a high cell density trench process to provide low L3RDS(ON) and to ensure minimal power loss and heat dissipation. 3Top View C

8.1. Size:469K secos
smg2318n.pdf pdf_icon

SMG2318N 1.2 A, 30 V, RDS(ON) 160 m N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ALensure minimal power loss and heat dissipation. 33T

8.2. Size:900K secos
smg2310a.pdf pdf_icon

SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 m Elektronische Bauelemente sRoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTIONS AThe SMG2310A utilized advanced processing techniques to achieve the Llowest possible on-resistance, extremely efficient and cost-effectiveness 33device. The SMG2310A is univers