F5021H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: F5021H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: TO220F5

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F5021H datasheet

 9.1. Size:57K  fairchild semi
 fjpf5021.pdf pdf_icon

F5021H

FJPF5021 High Voltage and High Reliability High Speed Switching tF = 0.1 s(Typ.) Wide SOA TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5

 9.2. Size:217K  onsemi
 fjpf5021.pdf pdf_icon

F5021H

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:40K  fuji
 f5016 f5017 f5018 f5019 f5020 f5021 f5022 f5023 f5028 f5029 f5030 f5031 f5032 f5033 f5038 f5041 f5042 f5043 f5044 f9202 f9203 f9206 f9207 f9208 f9209.pdf pdf_icon

F5021H

MOSFET / P wer MOSFETs MOSFET P wer MOSFET F T I F T VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) Device type Max. Typ. Package Net mass Volts Amps. Amps. Ohms ( ) Watts Volts Volts Grams F5018 40 8 - 0.14 15 - - K-pack 0.6 F5019 40 12 - 0.14 30 - - T-pack 1.6 F5020 40 3

Otros transistores... ECG454, ECG455, F5001H, F5016H, F5017H, F5018, F5019, F5020, IRFB4110, F5022, F5023, F5026, F5027, F5028, F5029, F5030, F5031