All MOSFET. F5021H Datasheet

 

F5021H MOSFET. Datasheet pdf. Equivalent


   Type Designator: F5021H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO220F5

 F5021H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

F5021H Datasheet (PDF)

 9.1. Size:57K  fairchild semi
 fjpf5021.pdf

F5021H F5021H

FJPF5021High Voltage and High Reliability High Speed Switching : tF = 0.1s(Typ.) Wide SOATO-220F11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5

 9.2. Size:217K  onsemi
 fjpf5021.pdf

F5021H F5021H

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:40K  fuji
 f5016 f5017 f5018 f5019 f5020 f5021 f5022 f5023 f5028 f5029 f5030 f5031 f5032 f5033 f5038 f5041 f5042 f5043 f5044 f9202 f9203 f9206 f9207 f9208 f9209.pdf

F5021H

MOSFET / Pwer MOSFETs MOSFET Pwer MOSFET F TI F T VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) Device type Max. Typ. Package Net massVolts Amps. Amps. Ohms () Watts Volts Volts GramsF5018 40 8 - 0.14 15 - - K-pack 0.6F5019 40 12 - 0.14 30 - - T-pack 1.6F5020 40 3

Datasheet: ECG454 , ECG455 , F5001H , F5016H , F5017H , F5018 , F5019 , F5020 , 10N60 , F5022 , F5023 , F5026 , F5027 , F5028 , F5029 , F5030 , F5031 .

History: IXFB70N60Q2

 

 
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