SMG2336N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SMG2336N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5.2 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: SC59

Búsqueda de reemplazo de MOSFET SMG2336N

SMG2336N Datasheet (PDF)

..1. Size:68K secos
smg2336n.pdf

SMG2336N 2.5 A, 30 V, RDS(ON) 32 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. AL33Top

8.1. Size:407K secos
smg2334n.pdf

SMG2334N 3.5A, 30V, RDS(ON) 60m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and AL to ensure minimal power loss and heat dissipation. 33Top View C B11 2

8.2. Size:65K secos
smg2330n.pdf

SMG2330N 5.2A, 30V, RDS(ON) 32m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High ACell Density process. Low RDS(on) assures minimal power Lloss and conserves energy, making this device ideal for 33use

8.3. Size:291K secos
smg2334ne.pdf

SMG2334NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to Lensure minimal power loss and heat dissipation. 33 Top View C B11

8.4. Size:113K secos
smg2339p.pdf

SMG2339P -3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density process Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management ci

8.5. Size:922K cn vbsemi
smg2339p.pdf

SMG2339Pwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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