All MOSFET. SMG2336N Datasheet

 

SMG2336N Datasheet and Replacement


   Type Designator: SMG2336N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SC59
 

 SMG2336N substitution

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SMG2336N Datasheet (PDF)

 ..1. Size:68K  secos
 smg2336n.pdf pdf_icon

SMG2336N

SMG2336N 2.5 A, 30 V, RDS(ON) 32 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. AL33Top

 8.1. Size:407K  secos
 smg2334n.pdf pdf_icon

SMG2336N

SMG2334N 3.5A, 30V, RDS(ON) 60m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and AL to ensure minimal power loss and heat dissipation. 33Top View C B11 2

 8.2. Size:65K  secos
 smg2330n.pdf pdf_icon

SMG2336N

SMG2330N 5.2A, 30V, RDS(ON) 32m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High ACell Density process. Low RDS(on) assures minimal power Lloss and conserves energy, making this device ideal for 33use

 8.3. Size:291K  secos
 smg2334ne.pdf pdf_icon

SMG2336N

SMG2334NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to Lensure minimal power loss and heat dissipation. 33 Top View C B11

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Datasheet: SMG2327P , SMG2328 , SMG2328NE , SMG2328S , SMG2329P , SMG2330N , SMG2334N , SMG2334NE , 2N7000 , SMG2339P , SMG2340N , SMG2340NE , SMG2342N , SMG2342NE , SMG2343 , SMG2343P , SMG2343PE .

Keywords - SMG2336N MOSFET datasheet

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