SMG2343P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMG2343P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.8 VQgⓘ - Carga de la puerta: 6.4 nC
trⓘ - Tiempo de subida: 2.8 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm
Paquete / Cubierta: SC59
Búsqueda de reemplazo de MOSFET SMG2343P
SMG2343P Datasheet (PDF)
smg2343p.pdf
SMG2343P -3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
smg2343pe.pdf
SMG2343PE -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
smg2343.pdf
SMG2343 -4.1A , -30V , RDS(ON) 45 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 The SMG2343 uses advanced trench technology to Aprovide excellent on-resistance with low gate change. L3The device is suitable for use as a load switch or in PW
smg2342ne.pdf
SMG2342NE 5.2 A, 40 V, RDS(ON) 86 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and Ato ensure minimal power loss and heat dissipation. Typical L3applications
smg2340ne.pdf
SMG2340NE 5.2 A, 40 V, RDS(ON) 43 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure Aminimal power loss and heat dissipation. Typical applications L3ar
smg2342n.pdf
SMG2342N 5.2 A, 40 V, RDS(ON) 86 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ALensure minimal power loss heat dissipation. Typical applications
smg2340n.pdf
SMG2340N 5.2 A, 40 V, RDS(ON) 43 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and ensure ALminimal power loss and heat dissipation. Typical applications
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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