SMG2343P Datasheet and Replacement

SMG2343P -3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

SMG2343PE -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

SMG2343 -4.1A , -30V , RDS(ON) 45 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 The SMG2343 uses advanced trench technology to Aprovide excellent on-resistance with low gate change. L3The device is suitable for use as a load switch or in PW

SMG2342NE 5.2 A, 40 V, RDS(ON) 86 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and Ato ensure minimal power loss and heat dissipation. Typical L3applications

SMG2340NE 5.2 A, 40 V, RDS(ON) 43 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure Aminimal power loss and heat dissipation. Typical applications L3ar

SMG2342N 5.2 A, 40 V, RDS(ON) 86 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ALensure minimal power loss heat dissipation. Typical applications

SMG2340N 5.2 A, 40 V, RDS(ON) 43 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and ensure ALminimal power loss and heat dissipation. Typical applications