SMG2343P Datasheet. Specs and Replacement

Type Designator: SMG2343P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.8 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm

Package: SC59

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SMG2343P datasheet

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SMG2343P

SMG2343P -3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC ... See More ⇒

 0.1. Size:355K  secos
smg2343pe.pdf pdf_icon

SMG2343P

SMG2343PE -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC... See More ⇒

 7.1. Size:1321K  secos
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SMG2343P

SMG2343 -4.1A , -30V , RDS(ON) 45 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 The SMG2343 uses advanced trench technology to A provide excellent on-resistance with low gate change. L 3 The device is suitable for use as a load switch or in PW... See More ⇒

 8.1. Size:116K  secos
smg2342ne.pdf pdf_icon

SMG2343P

SMG2342NE 5.2 A, 40 V, RDS(ON) 86 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and A to ensure minimal power loss and heat dissipation. Typical L 3 applications ... See More ⇒

Detailed specifications: SMG2334NE, SMG2336N, SMG2339P, SMG2340N, SMG2340NE, SMG2342N, SMG2342NE, SMG2343, IRLB4132, SMG2343PE, SMG2358N, SMG2359P, SMG2370N, SMG2371P, SMG2390N, SMG2391P, SMG2398N

Keywords - SMG2343P MOSFET specs

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