SSD20P06-135D Todos los transistores

 

SSD20P06-135D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSD20P06-135D

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 0.135 Ohm

Empaquetado / Estuche: TO252

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SSD20P06-135D Datasheet (PDF)

1.1. ssd20p06-135d.pdf Size:390K _secos

SSD20P06-135D
SSD20P06-135D

SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135m? Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-

5.1. ssd2009.pdf Size:676K _samsung

SSD20P06-135D
SSD20P06-135D

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 6 S2 3 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2009 50V 0.13 3.0A N -Channel MOSFET Absolute Maximum Rat

5.2. ssd2003.pdf Size:361K _samsung

SSD20P06-135D
SSD20P06-135D

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2003 25V 0.10 3.5A N -Channel MOSFET Absolute Maximum Rat

 5.3. ssd2017.pdf Size:366K _samsung

SSD20P06-135D
SSD20P06-135D

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2017 20V 0.05 5.0A N -Channel MOSFET Absolute Maximum Rat

5.4. ssd2005.pdf Size:365K _samsung

SSD20P06-135D
SSD20P06-135D

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times S1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID SSD2005 -25V 0.25 -2.3A D1 D1 P-Channel MOSFET Absolute Maximum

 5.5. ssd2011.pdf Size:347K _samsung

SSD20P06-135D
SSD20P06-135D

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times Low Input Capacitance S1 Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID D1 D1 SSD2011 - 60V 0.280 - 2.0A P-Channel MOSFET Absolute Maxim

5.6. ssd2021.pdf Size:371K _samsung

SSD20P06-135D
SSD20P06-135D

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2021 30V 0.05 5.0A N -Channel MOSFET Absolute Maximum Rat

5.7. ssd2002.pdf Size:663K _samsung

SSD20P06-135D
SSD20P06-135D

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2002 BVdss Rds(on) ID N-Channel 25V 0.10 3.5A S1 D2 D2 P-Channel -25V 0.25 -2.3A N & P

5.8. ssd2008.pdf Size:669K _samsung

SSD20P06-135D
SSD20P06-135D

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2008 BVdss Rds(on) ID N-Channel 30V 0.05 3.5A S1 D2 D2 P-Channel -30V 0.10 -3.5A N & P

5.9. ssd2025.pdf Size:363K _samsung

SSD20P06-135D
SSD20P06-135D

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2025 60V 0.10 3.3A N -Channel MOSFET Absolute Maximum Rat

5.10. ssd2019.pdf Size:365K _samsung

SSD20P06-135D
SSD20P06-135D

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times S1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID SSD2019 -20V 0.11 -3.4A D1 D1 P-Channel MOSFET Absolute Maximum

5.11. ssd2006.pdf Size:671K _samsung

SSD20P06-135D
SSD20P06-135D

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 D2 D2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2006 BVdss Rds(on) ID N-Channel 30V 0.05 5.4A S1 S2 P-Channel -30V 0.10 -3.8A N & P

5.12. ssd2004.pdf Size:669K _samsung

SSD20P06-135D
SSD20P06-135D

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2004 BVdss Rds(on) ID N-Channel 20V 0.125 3.0A S1 D2 D2 P-Channel -20V 0.20 -2.5A N &

5.13. ssd20n10-250d.pdf Size:182K _secos

SSD20P06-135D
SSD20P06-135D

SSD20N10-250D N-Ch Enhancement Mode Power MOSFET 11A, 100V, RDS(ON) 280m? Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-

5.14. ssd20n15-250d.pdf Size:145K _secos

SSD20P06-135D
SSD20P06-135D

SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255m? Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-

5.15. ssd20n10-130d.pdf Size:80K _secos

SSD20P06-135D
SSD20P06-135D

SSD20N10-130D 17A , 100V , RDS(ON) 130m? N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on)

5.16. ssd20n06-90d.pdf Size:396K _secos

SSD20P06-135D
SSD20P06-135D

SSD20N06-90D N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 m? Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

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