SSD20P06-135D Todos los transistores

SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2004 BVdss Rds(on) ID N-Channel 20V 0.125 3.0A S1 D2 D2 P-Channel -20V 0.20 -2.5A N

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2021 30V 0.05 5.0A N -Channel MOSFET Absolute Maximum

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2025 60V 0.10 3.3A N -Channel MOSFET Absolute Maximum

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times S1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID SSD2005 -25V 0.25 -2.3A D1 D1 P-Channel MOSFET Absolute Maxim

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2002 BVdss Rds(on) ID N-Channel 25V 0.10 3.5A S1 D2 D2 P-Channel -25V 0.25 -2.3A N

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2008 BVdss Rds(on) ID N-Channel 30V 0.05 3.5A S1 D2 D2 P-Channel -30V 0.10 -3.5A N

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 D2 D2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2006 BVdss Rds(on) ID N-Channel 30V 0.05 5.4A S1 S2 P-Channel -30V 0.10 -3.8A N

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times S1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID SSD2019 -20V 0.11 -3.4A D1 D1 P-Channel MOSFET Absolute Maxim

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2003 25V 0.10 3.5A N -Channel MOSFET Absolute Maximum

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2017 20V 0.05 5.0A N -Channel MOSFET Absolute Maximum

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times Low Input Capacitance S1 Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID D1 D1 SSD2011 - 60V 0.280 - 2.0A P-Channel MOSFET Absolute Ma

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 6 S2 3 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2009 50V 0.13 3.0A N -Channel MOSFET Absolute Maximum

SSD20N10-130D 17A , 100V , RDS(ON) 130m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS

SSD20N10-250D N-Ch Enhancement Mode Power MOSFET 11A, 100V, RDS(ON) 280m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are

SSD20N06-90D N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are