SSD20P06-135D PDF and Equivalents Search

 ..1. Size:390K  secos
 ssd20p06-135d.pdf

SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are... See More ⇒

 9.1. Size:669K  samsung
 ssd2004.pdf

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2004 BVdss Rds(on) ID N-Channel 20V 0.125 3.0A S1 D2 D2 P-Channel -20V 0.20 -2.5A N... See More ⇒

 9.2. Size:371K  samsung
 ssd2021.pdf

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2021 30V 0.05 5.0A N -Channel MOSFET Absolute Maximum ... See More ⇒

 9.3. Size:363K  samsung
 ssd2025.pdf

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2025 60V 0.10 3.3A N -Channel MOSFET Absolute Maximum ... See More ⇒

 9.4. Size:365K  samsung
 ssd2005.pdf

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times S1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID SSD2005 -25V 0.25 -2.3A D1 D1 P-Channel MOSFET Absolute Maxim... See More ⇒

 9.5. Size:663K  samsung
 ssd2002.pdf

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2002 BVdss Rds(on) ID N-Channel 25V 0.10 3.5A S1 D2 D2 P-Channel -25V 0.25 -2.3A N ... See More ⇒

 9.6. Size:669K  samsung
 ssd2008.pdf

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2008 BVdss Rds(on) ID N-Channel 30V 0.05 3.5A S1 D2 D2 P-Channel -30V 0.10 -3.5A N ... See More ⇒

 9.7. Size:671K  samsung
 ssd2006.pdf

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 D2 D2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2006 BVdss Rds(on) ID N-Channel 30V 0.05 5.4A S1 S2 P-Channel -30V 0.10 -3.8A N ... See More ⇒

 9.8. Size:365K  samsung
 ssd2019.pdf

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times S1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID SSD2019 -20V 0.11 -3.4A D1 D1 P-Channel MOSFET Absolute Maxim... See More ⇒

 9.9. Size:361K  samsung
 ssd2003.pdf

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2003 25V 0.10 3.5A N -Channel MOSFET Absolute Maximum ... See More ⇒

 9.10. Size:366K  samsung
 ssd2017.pdf

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2017 20V 0.05 5.0A N -Channel MOSFET Absolute Maximum ... See More ⇒

 9.11. Size:347K  samsung
 ssd2011.pdf

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times Low Input Capacitance S1 Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID D1 D1 SSD2011 - 60V 0.280 - 2.0A P-Channel MOSFET Absolute Ma... See More ⇒

 9.12. Size:676K  samsung
 ssd2009.pdf

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 6 S2 3 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2009 50V 0.13 3.0A N -Channel MOSFET Absolute Maximum ... See More ⇒

 9.13. Size:80K  secos
 ssd20n10-130d.pdf

SSD20N10-130D 17A , 100V , RDS(ON) 130m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS... See More ⇒

 9.14. Size:182K  secos
 ssd20n10-250d.pdf

SSD20N10-250D N-Ch Enhancement Mode Power MOSFET 11A, 100V, RDS(ON) 280m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar... See More ⇒

 9.15. Size:145K  secos
 ssd20n15-250d.pdf

SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are... See More ⇒

 9.16. Size:396K  secos
 ssd20n06-90d.pdf

SSD20N06-90D N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are ... See More ⇒