SSD20P06-135D
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSD20P06-135D
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135
Ohm
Package:
TO252
SSD20P06-135D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSD20P06-135D
Datasheet (PDF)
..1. Size:390K secos
ssd20p06-135d.pdf 
SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack)process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are
9.1. Size:669K samsung
ssd2004.pdf
8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1 G2 Product SummarySSD2004 BVdss Rds(on) IDN-Channel 20V 0.125 3.0AS1 D2 D2P-Channel -20V 0.20 -2.5A N
9.2. Size:371K samsung
ssd2021.pdf
I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDS1SSD2021 30V 0.05 5.0AN -Channel MOSFETAbsolute Maximum
9.3. Size:363K samsung
ssd2025.pdf
I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDS1SSD2025 60V 0.10 3.3AN -Channel MOSFETAbsolute Maximum
9.4. Size:365K samsung
ssd2005.pdf
I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesS1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDSSD2005 -25V 0.25 -2.3AD1 D1P-Channel MOSFETAbsolute Maxim
9.5. Size:663K samsung
ssd2002.pdf
8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1 G2 Product SummarySSD2002 BVdss Rds(on) IDN-Channel 25V 0.10 3.5AS1 D2 D2P-Channel -25V 0.25 -2.3A N
9.6. Size:669K samsung
ssd2008.pdf
8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1 G2 Product SummarySSD2008 BVdss Rds(on) IDN-Channel 30V 0.05 3.5AS1 D2 D2P-Channel -30V 0.10 -3.5A N
9.7. Size:671K samsung
ssd2006.pdf
8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 D2 D2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1 G2 Product SummarySSD2006 BVdss Rds(on) IDN-Channel 30V 0.05 5.4AS1 S2P-Channel -30V 0.10 -3.8A N
9.8. Size:365K samsung
ssd2019.pdf
I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesS1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDSSD2019 -20V 0.11 -3.4AD1 D1P-Channel MOSFETAbsolute Maxim
9.9. Size:361K samsung
ssd2003.pdf
I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDS1SSD2003 25V 0.10 3.5AN -Channel MOSFETAbsolute Maximum
9.10. Size:366K samsung
ssd2017.pdf
I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDS1SSD2017 20V 0.05 5.0AN -Channel MOSFETAbsolute Maximum
9.11. Size:347K samsung
ssd2011.pdf
I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times Low Input CapacitanceS1 Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDD1 D1SSD2011 - 60V 0.280 - 2.0AP-Channel MOSFETAbsolute Ma
9.12. Size:676K samsung
ssd2009.pdf
I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D16S2 3 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDS1SSD2009 50V 0.13 3.0AN -Channel MOSFETAbsolute Maximum
9.13. Size:80K secos
ssd20n10-130d.pdf
SSD20N10-130D 17A , 100V , RDS(ON) 130m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS
9.14. Size:182K secos
ssd20n10-250d.pdf
SSD20N10-250D N-Ch Enhancement Mode Power MOSFET 11A, 100V, RDS(ON) 280m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack)These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar
9.15. Size:145K secos
ssd20n15-250d.pdf
SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack)process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are
9.16. Size:396K secos
ssd20n06-90d.pdf
SSD20N06-90D N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are
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