SSE90N08-08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSE90N08-08
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 300 W
Tensión drenaje-fuente (Vds): 80 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 90 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 45 nS
Conductancia de drenaje-sustrato (Cd): 449 pF
Resistencia drenaje-fuente RDS(on): 0.011 Ohm
Empaquetado / Estuche: TO220P
Búsqueda de reemplazo de MOSFET SSE90N08-08
SSE90N08-08 Datasheet (PDF)
1.1. sse90n08-08.pdf Size:1955K _secos
SSE90N08-08 90A , 80V , RDS(ON) 11m? ? ? ? N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P FEATURES D Low RDS(on) trench technology. C Low thermal impedance B R Fast Switch Speed. T A E S G F I APPLICATIONS H White LED boost converters J K L Automotive Syst
3.1. sse90n04-03p.pdf Size:674K _secos
SSE90N04-03P 90A , 40V , RDS(ON) 5 m? N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TO-220P These miniature surface mount MOSFETs utilize a B N high cell density trench process to provide low RDS(on) D and to ensure minimal power loss and heat dissipation. E FEATURES M
3.2. sse90n06-30p.pdf Size:163K _secos
SSE90N06-30P N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m? Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss C and heat dissipation. Typical applica
3.3. sse90n06-10p.pdf Size:611K _secos
SSE90N06-10P 90A , 60V , RDS(ON) 9.9 m? N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a D High Cell Density trench process to provide low RDS(on) C and to ensure minimal power loss and heat dissipation. B R T A E F
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: UPA2700GR | UPA2680T1E | UPA2672T1R | UPA2670T1R | UPA2650T1E | UPA2593T1H | UPA2592T1H | UPA2591T1H | UPA2590T1H | UPA2562T1H | UPA2561T1H | UPA2560T1H | UPA2560 | UPA2550T1H | UPA2550 |