SSE90N08-08 Todos los transistores

 

SSE90N08-08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSE90N08-08

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 90 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 45 nS

Conductancia de drenaje-sustrato (Cd): 449 pF

Resistencia drenaje-fuente RDS(on): 0.011 Ohm

Empaquetado / Estuche: TO220P

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SSE90N08-08 Datasheet (PDF)

1.1. sse90n08-08.pdf Size:1955K _secos

SSE90N08-08
SSE90N08-08

SSE90N08-08 90A , 80V , RDS(ON) 11m? ? ? ? N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P FEATURES D Low RDS(on) trench technology. C Low thermal impedance B R Fast Switch Speed. T A E S G F I APPLICATIONS H White LED boost converters J K L Automotive Syst

3.1. sse90n04-03p.pdf Size:674K _secos

SSE90N08-08
SSE90N08-08

SSE90N04-03P 90A , 40V , RDS(ON) 5 m? N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TO-220P These miniature surface mount MOSFETs utilize a B N high cell density trench process to provide low RDS(on) D and to ensure minimal power loss and heat dissipation. E FEATURES M

3.2. sse90n06-30p.pdf Size:163K _secos

SSE90N08-08
SSE90N08-08

SSE90N06-30P N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m? Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss C and heat dissipation. Typical applica

 3.3. sse90n06-10p.pdf Size:611K _secos

SSE90N08-08
SSE90N08-08

SSE90N06-10P 90A , 60V , RDS(ON) 9.9 m? N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a D High Cell Density trench process to provide low RDS(on) C and to ensure minimal power loss and heat dissipation. B R T A E F

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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