SSE90N08-08 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSE90N08-08
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 449 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de SSE90N08-08 MOSFET
SSE90N08-08 PDF Specs
sse90n08-08.pdf
SSE90N08-08 90A , 80V , RDS(ON) 11m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P FEATURES D Low RDS(on) trench technology. C Low thermal impedance B R Fast Switch Speed. T A E S G F I APPLICATIONS H White LED boost converters J K L Auto... See More ⇒
sse90n06-30p.pdf
SSE90N06-30P N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss C and heat dissipation. Typical ap... See More ⇒
sse90n04-03p.pdf
SSE90N04-03P 90A , 40V , RDS(ON) 5 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TO-220P These miniature surface mount MOSFETs utilize a B N high cell density trench process to provide low RDS(on) D and to ensure minimal power loss and heat dissipation. E FEATURES... See More ⇒
sse90n06-10p.pdf
SSE90N06-10P 90A , 60V , RDS(ON) 9.9 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a D High Cell Density trench process to provide low RDS(on) C and to ensure minimal power loss and heat dissipation. B R T A ... See More ⇒
Otros transistores... SSD9971 , SSD9973 , SSDF9504 , SSE110N03-03P , SSE70N10-44P , SSE90N04-03P , SSE90N06-10P , SSE90N06-30P , IRFZ44N , SSE90N10-14 , SSE90P06-08P , SSF1320N , SSF1321P , SSF1331P , SSF7400 , SSF7401 , SSF84W .
Liste
Recientemente añadidas las descripciónes de los transistores:
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