SSE90P06-08P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSE90P06-08P Datasheet (PDF)

..1. Size:75K secos
sse90p06-08p.pdf pdf_icon

SSE90P06-08P -90A , -60V , RDS(ON) 12m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a Dhigh cell density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation

9.1. Size:559K secos
sse90n10-14.pdf pdf_icon

SSE90N10-14 90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation. BR TA

9.2. Size:163K secos
sse90n06-30p.pdf pdf_icon

SSE90N06-30P N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss C and heat dissipation. Typical ap

9.3. Size:674K secos
sse90n04-03p.pdf pdf_icon

SSE90N04-03P 90A , 40V , RDS(ON) 5 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TO-220P These miniature surface mount MOSFETs utilize a B Nhigh cell density trench process to provide low RDS(on) Dand to ensure minimal power loss and heat dissipation. EFEATURES