All MOSFET. SSE90P06-08P Datasheet

 

SSE90P06-08P Datasheet and Replacement


   Type Designator: SSE90P06-08P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
 

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SSE90P06-08P Datasheet (PDF)

 ..1. Size:75K  secos
sse90p06-08p.pdf pdf_icon

SSE90P06-08P

SSE90P06-08P -90A , -60V , RDS(ON) 12m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION These miniature surface mount MOSFETs utilize a Dhigh cell density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation

 9.1. Size:559K  secos
sse90n10-14.pdf pdf_icon

SSE90P06-08P

SSE90N10-14 90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) Cand to ensure minimal power loss and heat dissipation. BR TA

 9.2. Size:163K  secos
sse90n06-30p.pdf pdf_icon

SSE90P06-08P

SSE90N06-30P N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TO-220P DESCRIPTION D These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss C and heat dissipation. Typical ap

 9.3. Size:674K  secos
sse90n04-03p.pdf pdf_icon

SSE90P06-08P

SSE90N04-03P 90A , 40V , RDS(ON) 5 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TO-220P These miniature surface mount MOSFETs utilize a B Nhigh cell density trench process to provide low RDS(on) Dand to ensure minimal power loss and heat dissipation. EFEATURES

Datasheet: SSDF9504 , SSE110N03-03P , SSE70N10-44P , SSE90N04-03P , SSE90N06-10P , SSE90N06-30P , SSE90N08-08 , SSE90N10-14 , IRF740 , SSF1320N , SSF1321P , SSF1331P , SSF7400 , SSF7401 , SSF84W , SSG0410 , SSG4224 .

History: 2N60AF | NTTFS5C454NL | HY3003B

Keywords - SSE90P06-08P MOSFET datasheet

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