SSG4407P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSG4407P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET SSG4407P
SSG4407P Datasheet (PDF)
ssg4407p.pdf
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ssg4402n.pdf
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ssg4462n.pdf
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ssg4499p.pdf
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ssg4480n.pdf
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ssg4435.pdf
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ssg4410n.pdf
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ssg4470stm.pdf
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ssg4434n.pdf
SSG4434N 18.6 A, 30 V, RDS(ON) 7 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered L
ssg4492n.pdf
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ssg4490n.pdf
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ssg4436n.pdf
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ssg4463p.pdf
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Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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