All MOSFET. SSG4407P Datasheet

 

SSG4407P Datasheet and Replacement


   Type Designator: SSG4407P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8
 

 SSG4407P substitution

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SSG4407P Datasheet (PDF)

 ..1. Size:542K  secos
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SSG4407P

SSG4407P -15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures Bminimal power loss and conserves energy, making this device ideal for use

 8.1. Size:596K  secos
ssg4402n.pdf pdf_icon

SSG4407P

SSG4402N 6.7 A, 60 V, RDS(ON) 38 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

 9.1. Size:142K  secos
ssg4462n.pdf pdf_icon

SSG4407P

SSG4462N 9.7 A, 60 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

 9.2. Size:168K  secos
ssg4499p.pdf pdf_icon

SSG4407P

SSG4499P -6.8 A, -60 V, RDS(ON) 45 mP-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. L DMFEATURES

Datasheet: SSG0410 , SSG4224 , SSG4228 , SSG4362N , SSG4390N , SSG4392N , SSG4394N , SSG4402N , AON6414A , SSG4410N , SSG4434N , SSG4435 , SSG4436N , SSG4462N , SSG4463P , SSG4470STM , SSG4480N .

History: SP8M3-TB | SSG4463P

Keywords - SSG4407P MOSFET datasheet

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