SSG4874N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSG4874N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 579 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de SSG4874N MOSFET
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SSG4874N datasheet
ssg4874n.pdf
SSG4874N 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC
ssg4835p.pdf
SSG4835P -9.5 A, -30 V, RDS(ON) 19 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power ma
ssg4825p.pdf
SSG4825P -11.5 A, 30 V, RDS(ON) 13 m P-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal B power loss and heat dissipation. Typical applications are DC
ssg4890n.pdf
SSG4890N 1.4 A, 150 V, RDS(ON) 700 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical L D app
Otros transistores... SSG4543C, SSG4639STM, SSG4801, SSG4825P, SSG4825PE, SSG4835P, SSG4841P, SSG4842N, IRFB3607, SSG4890N, SSG4902N, SSG4902NA, SSG4910N, SSG4920N, SSG4930N, SSG4932N, SSG4934N
History: F5016H | DMN2020LSN
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