SSG4874N Spec and Replacement
Type Designator: SSG4874N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 16.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 15 nC
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 579 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SOP8
SSG4874N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSG4874N Specs
ssg4874n.pdf
SSG4874N 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC... See More ⇒
ssg4835p.pdf
SSG4835P -9.5 A, -30 V, RDS(ON) 19 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power ma... See More ⇒
ssg4825p.pdf
SSG4825P -11.5 A, 30 V, RDS(ON) 13 m P-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal B power loss and heat dissipation. Typical applications are DC... See More ⇒
ssg4890n.pdf
SSG4890N 1.4 A, 150 V, RDS(ON) 700 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical L D app... See More ⇒
Detailed specifications: SSG4543C , SSG4639STM , SSG4801 , SSG4825P , SSG4825PE , SSG4835P , SSG4841P , SSG4842N , IRFB3607 , SSG4890N , SSG4902N , SSG4902NA , SSG4910N , SSG4920N , SSG4930N , SSG4932N , SSG4934N .
Keywords - SSG4874N MOSFET specs
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