FA38SA50LC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FA38SA50LC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 500 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: SOT227

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FA38SA50LC datasheet

 ..1. Size:171K  international rectifier
 fa38sa50lc.pdf pdf_icon

FA38SA50LC

PD - 91615B FA38SA50LC HEXFET Power MOSFET Fully Isolated Package D Easy to Use and Parallel VDSS = 500V Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.13 Fully Avalanche Rated G Simple Drive Requirements ID = 38A Low Drain to Case Capacitance S Low Internal Inductance Description Third Generation HEXFETs from International Rectifier provide the designer with

 0.1. Size:170K  vishay
 fa38sa50lcp.pdf pdf_icon

FA38SA50LC

FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements SOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for industrial level Material

 6.1. Size:120K  international rectifier
 fa38sa50.pdf pdf_icon

FA38SA50LC

PD 9.1615 FA38SA50 PRELIMINARY HEXFET Power MOSFET Fully Isolated Package D Easy to Use and Parallel VDSS = 500V Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.13 Fully Avalanche Rated G Simple Drive Requirements ID = 38A Low Drain to Case Capacitance S Low Internal Inductance Description Third Generation HEXFETs from International Rectifier provide the desi

 6.2. Size:194K  vishay
 fa38sa50.pdf pdf_icon

FA38SA50LC

FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated SOT-227 Simple drive requirements Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/EC Designed for industrial level

MOSTRAR MÁS

Otros transistores... F5027, F5028, F5029, F5030, F5031, F5032, F5033, F5038H, 7N65, FA57SA50LC, FB180SA10, AO3423B, AS2306, FDB4020P, FDB4030L, FDB5680, FDB5690