Справочник MOSFET. FA38SA50LC

 

FA38SA50LC Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FA38SA50LC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 38 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
   Тип корпуса: SOT227
     - подбор MOSFET транзистора по параметрам

 

FA38SA50LC Datasheet (PDF)

 ..1. Size:171K  international rectifier
fa38sa50lc.pdfpdf_icon

FA38SA50LC

PD - 91615BFA38SA50LCHEXFET Power MOSFET Fully Isolated PackageD Easy to Use and ParallelVDSS = 500V Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.13 Fully Avalanche RatedG Simple Drive RequirementsID = 38A Low Drain to Case CapacitanceS Low Internal InductanceDescriptionThird Generation HEXFETs from International Rectifierprovide the designer with

 0.1. Size:170K  vishay
fa38sa50lcp.pdfpdf_icon

FA38SA50LC

FA38SA50LCPwww.vishay.comVishay SemiconductorsPower MOSFET, 38 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirementsSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for industrial level Material

 6.1. Size:120K  international rectifier
fa38sa50.pdfpdf_icon

FA38SA50LC

PD 9.1615FA38SA50PRELIMINARYHEXFET Power MOSFET Fully Isolated PackageD Easy to Use and ParallelVDSS = 500V Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.13 Fully Avalanche RatedG Simple Drive RequirementsID = 38A Low Drain to Case CapacitanceS Low Internal InductanceDescriptionThird Generation HEXFETs from International Rectifierprovide the desi

 6.2. Size:194K  vishay
fa38sa50.pdfpdf_icon

FA38SA50LC

FA38SA50LCPVishay SemiconductorsPower MOSFET, 38 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche ratedSOT-227 Simple drive requirements Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/EC Designed for industrial level

Другие MOSFET... F5027 , F5028 , F5029 , F5030 , F5031 , F5032 , F5033 , F5038H , IRFP250N , FA57SA50LC , FB180SA10 , AO3423B , AS2306 , FDB4020P , FDB4030L , FDB5680 , FDB5690 .

History: HAF1002 | APL602J | TK3A60DA | IRFIBC20G | HGD750N15M | BSS214NW

 

 
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