SSG4930N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSG4930N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 62 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de SSG4930N MOSFET
SSG4930N Datasheet (PDF)
ssg4930n.pdf

SSG4930N 5 A, 30 V, RDS(ON) 58 mDual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications a
ssg4932n.pdf

SSG4932N 10 A, 30 V, RDS(ON) 13.5 mDual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical Bapplication
ssg4934n.pdf

SSG4934N 8.9 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical
ssg4935p.pdf

SSG4935P P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize high cell density process. Low RDS(on) assures minimal power loss and conserves Benergy, making this device ideal for use in power m
Otros transistores... SSG4841P , SSG4842N , SSG4874N , SSG4890N , SSG4902N , SSG4902NA , SSG4910N , SSG4920N , 20N50 , SSG4932N , SSG4934N , SSG4935P , SSG4940N , SSG4940NC , SSG4942N , SSG4953 , SSG4953P .
History: STS9NF3LL | 2SK1105-R | 40N06 | LN235N3T5G | SM4842NSK | SLP5N60C | IRF323
History: STS9NF3LL | 2SK1105-R | 40N06 | LN235N3T5G | SM4842NSK | SLP5N60C | IRF323



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