SSG4953P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSG4953P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 5.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.8 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: SOP8

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SSG4953P datasheet

 ..1. Size:596K  secos
ssg4953p.pdf pdf_icon

SSG4953P

SSG4953P -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) B assures minimal power loss and conserves energy, making this device ideal for use in po

 7.1. Size:534K  secos
ssg4953.pdf pdf_icon

SSG4953P

SSG4953 -5A, -30V,RDS(ON) 53m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOP-8 Description 0.19 0.25 0.40 0.90 o The SSG4953 provide the designer with the best Combination of fast switching, 0.375 REF ruggedized device design, Ultra low on-resistance and cost-effectiveness. 6.

 9.1. Size:106K  secos
ssg4940n.pdf pdf_icon

SSG4953P

SSG4940N 8.3A , 40V , RDS(ON) 22 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications

 9.2. Size:145K  secos
ssg4942n.pdf pdf_icon

SSG4953P

SSG4942N Dual N-Channel Mode Power MOSFET 4.4 A, 40 V, RDS(ON) 75 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications a

Otros transistores... SSG4930N, SSG4932N, SSG4934N, SSG4935P, SSG4940N, SSG4940NC, SSG4942N, SSG4953, 2SK3568, SSG4990N, SSG5509A, SSG6612N, SSG6680, SSG9435, SSG9435BDY, SSG9435P, SSG9475