FB180SA10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FB180SA10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 480 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: SOT227

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FB180SA10 datasheet

 ..1. Size:137K  international rectifier
 fb180sa10.pdf pdf_icon

FB180SA10

PD- 91651C FB180SA10 HEXFET Power MOSFET Fully Isolated Package D Easy to Use and Parallel VDSS = 100V Very Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.0065W Fully Avalanche Rated G Simple Drive Requirements ID = 180A Low Drain to Case Capacitance S Low Internal Inductance Description Fifth Generation, high current density HEXFETS are paralled into a compact,

 0.1. Size:184K  vishay
 fb180sa10p.pdf pdf_icon

FB180SA10

FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES Fully isolated package Easy to use and parallel Very low on-resistance Dynamic dV/dt rating Fully avalanche rated SOT-227 Simple drive requirements Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY DESCRIPTION

 9.1. Size:10381K  cn scilicon
 sfw1800n650c2 sfp1800n650c2 sfb1800n650c2.pdf pdf_icon

FB180SA10

SFW1800N650C2,SFP1800N650C2,SFB1800N650C2 N-MOSFET 650V, 180m , 60A Features Product Summary Low R & FOM DS(on) VDS 650V Extremely low switching loss RDS(on) typ. 180m Excellent stability and uniformity ID 60A Easy to drive 100% DVDS Tested Applications 100% Avalanche Tested Lighting Hard switching PWM Server power supply Charger SFW

Otros transistores... F5029, F5030, F5031, F5032, F5033, F5038H, FA38SA50LC, FA57SA50LC, IRF630, AO3423B, AS2306, FDB4020P, FDB4030L, FDB5680, FDB5690, FDB6030BL, FDB6030L