All MOSFET. FB180SA10 Datasheet

 

FB180SA10 Datasheet and Replacement


   Type Designator: FB180SA10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 480 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 250 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: SOT227
 

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FB180SA10 Datasheet (PDF)

 ..1. Size:137K  international rectifier
fb180sa10.pdf pdf_icon

FB180SA10

PD- 91651CFB180SA10HEXFET Power MOSFET Fully Isolated PackageD Easy to Use and ParallelVDSS = 100V Very Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.0065W Fully Avalanche RatedG Simple Drive RequirementsID = 180A Low Drain to Case CapacitanceS Low Internal InductanceDescriptionFifth Generation, high current density HEXFETS areparalled into a compact,

 0.1. Size:184K  vishay
fb180sa10p.pdf pdf_icon

FB180SA10

FB180SA10PVishay SemiconductorsPower MOSFET, 180 AFEATURES Fully isolated package Easy to use and parallel Very low on-resistance Dynamic dV/dt rating Fully avalanche ratedSOT-227 Simple drive requirements Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/ECPRODUCT SUMMARYDESCRIPTION

 9.1. Size:10381K  cn scilicon
sfw1800n650c2 sfp1800n650c2 sfb1800n650c2.pdf pdf_icon

FB180SA10

SFW1800N650C2,SFP1800N650C2,SFB1800N650C2 N-MOSFET 650V, 180m, 60AFeatures Product Summary Low R & FOMDS(on) VDS650VExtremely low switching lossRDS(on) typ. 180mExcellent stability and uniformityID60AEasy to drive100% DVDS TestedApplications100% Avalanche Tested Lighting Hard switching PWM Server power supply ChargerSFW

Datasheet: F5029 , F5030 , F5031 , F5032 , F5033 , F5038H , FA38SA50LC , FA57SA50LC , AON7408 , AO3423B , AS2306 , FDB4020P , FDB4030L , FDB5680 , FDB5690 , FDB6030BL , FDB6030L .

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