FB180SA10 Datasheet and Replacement

PD- 91651CFB180SA10HEXFET Power MOSFET Fully Isolated PackageD Easy to Use and ParallelVDSS = 100V Very Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.0065W Fully Avalanche RatedG Simple Drive RequirementsID = 180A Low Drain to Case CapacitanceS Low Internal InductanceDescriptionFifth Generation, high current density HEXFETS areparalled into a compact,

FB180SA10PVishay SemiconductorsPower MOSFET, 180 AFEATURES Fully isolated package Easy to use and parallel Very low on-resistance Dynamic dV/dt rating Fully avalanche ratedSOT-227 Simple drive requirements Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/ECPRODUCT SUMMARYDESCRIPTION

SFW1800N650C2,SFP1800N650C2,SFB1800N650C2 N-MOSFET 650V, 180m, 60AFeatures Product Summary Low R & FOMDS(on) VDS650VExtremely low switching lossRDS(on) typ. 180mExcellent stability and uniformityID60AEasy to drive100% DVDS TestedApplications100% Avalanche Tested Lighting Hard switching PWM Server power supply ChargerSFW