SSG9475 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSG9475
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 6.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de SSG9475 MOSFET
SSG9475 Datasheet (PDF)
ssg9475.pdf

SSG94756.9A, 60V,RDS(ON) 40m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90oThe SSG9475 provide the designer with the best Combination of fast switching, 0.375 REF6.20ruggedized device design, Ultra low on-resistance and cost-effectiveness. 5.800.25The SOP-8 is universally preferred f
ssg9435.pdf

SSG9435P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 mElektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The SSG9435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all
ssg9435bdy.pdf

SSG9435BDY -5.3 A, -30 V, RDS(ON) 36 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free SOP-8 DESCRIPTION The SSG9435BDY provide the designer with the best combination of fast switching, ruggedized device design, Blow on-resistance and cost-effectiveness. The SOP-8 package is
ssg9435p.pdf

SSG9435P -6.5 A, -30 V, RDS(ON) 49 mP-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applicat
Otros transistores... SSG4953P , SSG4990N , SSG5509A , SSG6612N , SSG6680 , SSG9435 , SSG9435BDY , SSG9435P , STF13NM60N , SSG9575 , SSK3018K , SSM0410 , SSM452 , SSM9971 , SSN3541 , SSP7150N , SSP7200N .
History: KIA2404A-247 | MMBF0202PLT1 | UTD420 | SFW9Z34TM | 2SK3924-01L | JCS9AN50CC | TSM6988DCX6
History: KIA2404A-247 | MMBF0202PLT1 | UTD420 | SFW9Z34TM | 2SK3924-01L | JCS9AN50CC | TSM6988DCX6



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