SSM0410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM0410
   Código: 410
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 10 V
   Qgⓘ - Carga de la puerta: 11.2 nC
   trⓘ - Tiempo de subida: 9.4 nS
   Cossⓘ - Capacitancia de salida: 38 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET SSM0410

SSM0410 Datasheet (PDF)

..1. Size:429K secos
ssm0410.pdf

SSM0410 3.5 A, 100V, RDS(ON) 220m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM0410 provide the designer with best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The SOT-223 package is universally preferred for

9.1. Size:567K silicon standard
ssm04n70bgf-a.pdf

SSM04N70BGF-AN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM04N70BGF-A achieves fast switching performanceBVDSS 650Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 4AD Pb-free; RoHS-compliant TO-220FMThe SSM04N7

9.2. Size:567K silicon standard
ssm04n70bgf-h.pdf

SSM04N70BGF-HN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM04N70BGF-H achieves fast switching performanceBVDSS 700Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 4AD Pb-free; RoHS-compliant TO-220FMThe SSM04N7

9.3. Size:644K silicon standard
ssm04n70bgp-a.pdf

SSM04N70BGP-AN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM04N70BGP-A achieves fast switching performanceBVDSS 650Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 4AD Pb-free; RoHS-compliant TO-220The SSM04N70B

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