SSM0410 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM0410

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.4 nS

Cossⓘ - Capacitancia de salida: 38 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm

Encapsulados: SOT223

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SSM0410 datasheet

 ..1. Size:429K  secos
 ssm0410.pdf pdf_icon

SSM0410

SSM0410 3.5 A, 100V, RDS(ON) 220m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM0410 provide the designer with best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The SOT-223 package is universally preferred for

 9.1. Size:567K  silicon standard
 ssm04n70bgf-a.pdf pdf_icon

SSM0410

SSM04N70BGF-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM04N70BGF-A achieves fast switching performance BVDSS 650V with low gate charge without a complex drive circuit. It RDS(ON) 2.4 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 4A D Pb-free; RoHS-compliant TO-220FM The SSM04N7

 9.2. Size:567K  silicon standard
 ssm04n70bgf-h.pdf pdf_icon

SSM0410

SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM04N70BGF-H achieves fast switching performance BVDSS 700V with low gate charge without a complex drive circuit. It RDS(ON) 2.4 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 4A D Pb-free; RoHS-compliant TO-220FM The SSM04N7

 9.3. Size:644K  silicon standard
 ssm04n70bgp-a.pdf pdf_icon

SSM0410

SSM04N70BGP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM04N70BGP-A achieves fast switching performance BVDSS 650V with low gate charge without a complex drive circuit. It RDS(ON) 2.4 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 4A D Pb-free; RoHS-compliant TO-220 The SSM04N70B

MOSTRAR MÁS

Otros transistores... SSG6612N, SSG6680, SSG9435, SSG9435BDY, SSG9435P, SSG9475, SSG9575, SSK3018K, IRFZ24N, SSM452, SSM9971, SSN3541, SSP7150N, SSP7200N, SSP7300N, SSP7411P, SSP7421P