SSM0410
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM0410
Marking Code: 410
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 10
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11.2
nC
trⓘ - Rise Time: 9.4
nS
Cossⓘ -
Output Capacitance: 38
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22
Ohm
Package:
SOT223
SSM0410
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM0410
Datasheet (PDF)
..1. Size:429K secos
ssm0410.pdf
SSM0410 3.5 A, 100V, RDS(ON) 220m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION The SSM0410 provide the designer with best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The SOT-223 package is universally preferred for
9.1. Size:567K silicon standard
ssm04n70bgf-a.pdf
SSM04N70BGF-AN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM04N70BGF-A achieves fast switching performanceBVDSS 650Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 4AD Pb-free; RoHS-compliant TO-220FMThe SSM04N7
9.2. Size:567K silicon standard
ssm04n70bgf-h.pdf
SSM04N70BGF-HN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM04N70BGF-H achieves fast switching performanceBVDSS 700Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 4AD Pb-free; RoHS-compliant TO-220FMThe SSM04N7
9.3. Size:644K silicon standard
ssm04n70bgp-a.pdf
SSM04N70BGP-AN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM04N70BGP-A achieves fast switching performanceBVDSS 650Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2.4is suitable for high voltage applications such as AC/DCconverters, SMPS and general off-line switching circuits.I 4AD Pb-free; RoHS-compliant TO-220The SSM04N70B
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