SSD20N10-130D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSD20N10-130D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
SSD20N10-130D Datasheet (PDF)
ssd20n10-130d.pdf

SSD20N10-130D 17A , 100V , RDS(ON) 130m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS
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SSD20N10-250D N-Ch Enhancement Mode Power MOSFET 11A, 100V, RDS(ON) 280m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack)These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar
ssd20n15-250d.pdf

SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack)process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are
ssd20n06-90d.pdf

SSD20N06-90D N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AP98T03GP-HF | CSD85312Q3E | FTK5N80DD | BUK7616-55A
History: AP98T03GP-HF | CSD85312Q3E | FTK5N80DD | BUK7616-55A



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