2N60F Todos los transistores

 

2N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N60F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 23 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 30 pF

Resistencia drenaje-fuente RDS(on): 5 Ohm

Empaquetado / Estuche: TO220F

Búsqueda de reemplazo de MOSFET 2N60F

 

2N60F Datasheet (PDF)

1.1. msu12n60f msu12n60t.pdf Size:714K _upd-mosfet

2N60F
2N60F

600V/12A POWER MOSFET (N-Channel) MSU12N60 600V/12A Power MOSFET (N-Channel) General Description  MSU12N60 is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate TO-220 TO-220F charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and

1.2. msk2n60f msk2n60t.pdf Size:663K _upd-mosfet

2N60F
2N60F

600V/2.0A N-Channel MOSFET MSK2N60T/F 600V/2.0A N-Channel MOSFET General Description • Fast switching time • Low on resistance, low gate charge • Excellent avalanche characteristics • Suitable for switching mode power supplies TO-220 Features • VDSS=600V, ID=2.0A; • Low Drain-Source ON Resistance: RDS(ON) =5.0 Ω @ VGS=10V • Qg(typ.)=10.9nC • RoHS C

 1.3. cs12n60f.pdf Size:252K _update_mosfet

2N60F
2N60F

BRF12N60 N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 该器件适用于高效电源模块,主动式 PFC 电路和基于半桥拓扑结构的电子节能灯。 Purpose: These devices are well suited for high efficient switched mode power supplies,active power factor correction,electronic lamp ballast based on half bridge topology. 特点: 低栅电荷,反向传输电容低,开关

1.4. cs12n60fa9h.pdf Size:251K _update_mosfet

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2N60F

Silicon N-Channel Power MOSFET R ○ CS12N60F A9H VDSS 600 V General Description: ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 1.5. l2n60d l2n60f l2n60i l2n60p.pdf Size:786K _update_mosfet

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2N60F

LESHAN RADIO COMPANY, LTD. L2N60 600V N-Channel MOSFET 2 DESCRIPTION 1 3

1.6. cs12n60fa9hd.pdf Size:354K _update_mosfet

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2N60F

Silicon N-Channel Power MOSFET R ○ CS12N60F A9HD VDSS 600 V General Description: ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

1.7. cs2n60fa9h.pdf Size:334K _update_mosfet

2N60F
2N60F

Silicon N-Channel Power MOSFET R ○ CS2N60F A9H General Description: VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.8. fch072n60f f085.pdf Size:633K _fairchild_semi

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November 2014 FCH072N60F_F085 N-Channel SuperFET II FRFET MOSFET 600 V, 52 A, 72 mΩ D Features Typical RDS(on) = 62 mΩ at VGS = 10 V, ID = 26 A Typical Qg(tot) = 160 nC at VGS = 10V, ID = 26 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new For current package drawing,

1.9. fch072n60f.pdf Size:582K _fairchild_semi

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December 2013 FCH072N60F N-Channel SuperFET® II FRFET® MOSFET 600 V, 52 A, 72 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 65 mΩ charge balance technology for outstanding low on-resistance and lower gate charge performance. This techno

1.10. 2n60p 2n60f 2n60i 2n60d.pdf Size:782K _wietron

2N60F
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2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 2 AMPERES DRAIN SOURCE VOLTAGE Description: 600 VOLTAGE This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched m

1.11. aotf12n60fd.pdf Size:590K _aosemi

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2N60F

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

1.12. aob12n60fd.pdf Size:590K _aosemi

2N60F
2N60F

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

1.13. aot12n60fd.pdf Size:590K _aosemi

2N60F
2N60F

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

1.14. mtn12n60fp.pdf Size:453K _cystek

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Spec. No. : C743FP Issued Date : 2011.05.09 CYStech Electronics Corp. Revised Date : 2014.05.15 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS :600V RDS(ON) : 0.6Ω typ. MTN12N60FP ID : 12A Description The MTN12N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

1.15. mtn2n60fp.pdf Size:284K _cystek

2N60F
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Spec. No. : C435FP Issued Date : 2009.01.19 CYStech Electronics Corp. Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 4.1Ω typ. MTN2N60FP ID : 2A Description The MTN2N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

1.16. 12n60 12n60f.pdf Size:2259K _goford

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GOFORD 12N60/12N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS 600V 0.65Ω 12A technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are

1.17. ssf12n60f.pdf Size:536K _silikron

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 SSF12N60F Main Product Characteristics: VDSS 600V RDS(on) 0.55Ω (typ.) ID 12A Sche ma ti c di agr a m TO220F Marking and pin Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery 

1.18. ssf2n60f.pdf Size:528K _silikron

2N60F
2N60F

 SSF2N60F Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recove

1.19. cs12n60f a9hd.pdf Size:354K _crhj

2N60F
2N60F

Silicon N-Channel Power MOSFET R ○ CS12N60F A9HD VDSS 600 V General Description: ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

1.20. cs12n60f a9h.pdf Size:252K _crhj

2N60F
2N60F

Silicon N-Channel Power MOSFET R ○ CS12N60F A9H VDSS 600 V General Description: ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.21. cs2n60f a9h.pdf Size:334K _crhj

2N60F
2N60F

Silicon N-Channel Power MOSFET R ○ CS2N60F A9H General Description: VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.22. cs12n60f a9r.pdf Size:270K _crhj

2N60F
2N60F

Silicon N-Channel Power MOSFET R ○ CS12N60F A9R General Description: VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.23. cm2n60f.pdf Size:145K _jdsemi

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2N60F

R CM2N60F 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等

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