2N60F Datasheet. Specs and Replacement
Type Designator: 2N60F 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO220F
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2N60F substitution
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2N60F datasheet
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2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 2 AMPERES DRAIN SOURCE VOLTAGE Description 600 VOLTAGE This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switche... See More ⇒
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December 2013 FCH072N60F N-Channel SuperFET II FRFET MOSFET 600 V, 52 A, 72 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 65 m charge balance technology for outstanding low on-resistance and lower gate charge performance. This techno... See More ⇒
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cs12n60fa9hd.pdf
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csfr12n60f.pdf
CSFR12N60F nvert Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC) Device Marking and Package Information Device Package Mark... See More ⇒
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CSFR2N60F,CSFR2N60P nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR2N60U,CSFR2N60D 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC) Device Marking and Package In... See More ⇒
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nvert Suzhou Convert Semiconductor Co ., Ltd. CS2N60F,CS2N60P,CS2N60U,CS2N60D,CS2N60C 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS2N60F... See More ⇒
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CS12N60F,CS12N60P nvert Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS12N60F TO-220F CS12N60F CS... See More ⇒
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FIR12N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features BVDDS=600V (Min.) Low gate charge Qg=41nC (Typ.) Low drain-source On resistance RDS(on)=0.65 (Max.) G D S 100% avalanche tested RoHS compliant device D G S Marking Diagram Y = Year A = Assembly Location WW = Work Week YAWW FIR12N60F = Specif... See More ⇒
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HM12N60 / HM12N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 12.0A, 600V, RDS(on) = 0.65 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 52nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast switc... See More ⇒
fxn12n60fs.pdf
FuXin Semiconductor Co., Ltd. FXN12N60FS Series Rev.A General Description Features The FXN12N60FS uses advanced Silicon s MOSFET Technology, which V = 600V DS provides high performance in on-state resistance, fast switching ID = 12A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in i... See More ⇒
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12N60 Series N-Channel MOSFET 12A, 600V, N H FQP12N60C H12N60P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 12N60 FQPF12N60C H12N60F F TO-220FP 12N60 Series Pin Assignment Features ID=12A Originative ... See More ⇒
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2N60 Series N-Channel MOSFET 2A, 600V, N H FQP2N60C H2N60P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 2N60 FQPF2N60C H2N60F F TO-220FP 2N60 Series Pin Assignment APPLICATION ID=2A ELECTRONIC BALLAST... See More ⇒
aot12n60fd.pdf
isc N-Channel MOSFET Transistor AOT12N60FD FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
fch072n60f.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCH072N60F FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒
aotf12n60fd.pdf
isc N-Channel MOSFET Transistor AOTF12N60FD FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aob12n60fd.pdf
isc N-Channel MOSFET Transistor AOB12N60FD FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
jcs2n60f.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor JCS2N60F FEATURES Low gate charge High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency switching mode power supply Electronic ballast UPS ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
Detailed specifications: SUM6K1N, SGM0410, SSD04N65, SSD20N10-130D, SSM9575, SST3585, 2N4003K, 2N60D, AON7506, 2N60I, 2N60P, 2N7002KT, 2SK3018W, 2SK3019T, 2SK3541M, 4N60D, 4N60F
Keywords - 2N60F MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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