2SK3018W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3018W3 DRAINN-Channel POWER MOSFETP b Lead(Pb)-Free3121GATEDescription: *GateSOT-323(SC-70) Protection Diode* Low on-resistance.2 SOURCE* Fast switching speed.* Low voltage drive (2.5V) makes this device ideal for portable equipment.* Easily designed drive circuits.* Easy to parallel.Features:* Simple Drive Requirement* Small Package OutlineMaxi

2SK3018W Rev.F Jul.-2019 DATA SHEET / Descriptions SOT-323 N MOS N-Channel MOSFET in a SOT-323 Plastic Package. / Features ,,, Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Halo

2SK3018WN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 30VDS I 300mAD R ( at V =10V) 8.0ohmDS(ON) GS R ( at V =4.5V) 13.0ohmDS(ON) GS ESD Protected Up to 2.5KV (HBM)General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low

2SK3018WN-channel MOSFET FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipmentLow voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted)= 25C unless otherwise noted) MOSFET ELECTRICAL CHARACT

FM120-M WILLAS2SK3018WT1THRU SOT-323 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better rMOSFET N-channel everse leakage current and thermal resistance.SOD-123H Low profile surface mounted applicat

L2SK3018WT1GS-L2SK3018WT1GN-channel MOSFET100 mA, 30 V1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low on-resistance.Drain (3)Fast switching sp

LESHAN RADIO COMPANY, LTD.Silicon N-channel MOSFETL2SK3018WT1G100 mA, 30 V3 Features 1) Low on-resistance. 12) Fast switching speed. 23) Low voltage drive (2.5V) makes this device ideal for portable equipment.4) Easily designed drive circuits. SC-705) Easy to parallel. We declare that the material of product compliance with RoHS requirements.N - ChannelMAX