2SK3018W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3018W
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 9 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
Тип корпуса: SOT323
2SK3018W Datasheet (PDF)
2sk3018w.pdf
2SK3018W3 DRAINN-Channel POWER MOSFETP b Lead(Pb)-Free3121GATEDescription: *GateSOT-323(SC-70) Protection Diode* Low on-resistance.2 SOURCE* Fast switching speed.* Low voltage drive (2.5V) makes this device ideal for portable equipment.* Easily designed drive circuits.* Easy to parallel.Features:* Simple Drive Requirement* Small Package OutlineMaxi
2sk3018w.pdf
2SK3018W Rev.F Jul.-2019 DATA SHEET / Descriptions SOT-323 N MOS N-Channel MOSFET in a SOT-323 Plastic Package. / Features ,,, Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Halo
2sk3018w.pdf
2SK3018WN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 30VDS I 300mAD R ( at V =10V) 8.0ohmDS(ON) GS R ( at V =4.5V) 13.0ohmDS(ON) GS ESD Protected Up to 2.5KV (HBM)General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low
2sk3018w.pdf
2SK3018WN-channel MOSFET FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipmentLow voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted)= 25C unless otherwise noted) MOSFET ELECTRICAL CHARACT
2sk3018wt1.pdf
FM120-M WILLAS2SK3018WT1THRU SOT-323 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better rMOSFET N-channel everse leakage current and thermal resistance.SOD-123H Low profile surface mounted applicat
l2sk3018wt1g s-l2sk3018wt1g.pdf
L2SK3018WT1GS-L2SK3018WT1GN-channel MOSFET100 mA, 30 V1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low on-resistance.Drain (3)Fast switching sp
l2sk3018wt1g.pdf
LESHAN RADIO COMPANY, LTD.Silicon N-channel MOSFETL2SK3018WT1G100 mA, 30 V3 Features 1) Low on-resistance. 12) Fast switching speed. 23) Low voltage drive (2.5V) makes this device ideal for portable equipment.4) Easily designed drive circuits. SC-705) Easy to parallel. We declare that the material of product compliance with RoHS requirements.N - ChannelMAX
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918