Справочник MOSFET. 2SK3018W

 

2SK3018W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3018W
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 9 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
   Тип корпуса: SOT323

 Аналог (замена) для 2SK3018W

 

 

2SK3018W Datasheet (PDF)

 ..1. Size:705K  wietron
2sk3018w.pdf

2SK3018W
2SK3018W

2SK3018W3 DRAINN-Channel POWER MOSFETP b Lead(Pb)-Free3121GATEDescription: *GateSOT-323(SC-70) Protection Diode* Low on-resistance.2 SOURCE* Fast switching speed.* Low voltage drive (2.5V) makes this device ideal for portable equipment.* Easily designed drive circuits.* Easy to parallel.Features:* Simple Drive Requirement* Small Package OutlineMaxi

 ..2. Size:1094K  blue-rocket-elect
2sk3018w.pdf

2SK3018W
2SK3018W

2SK3018W Rev.F Jul.-2019 DATA SHEET / Descriptions SOT-323 N MOS N-Channel MOSFET in a SOT-323 Plastic Package. / Features ,,, Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Halo

 ..3. Size:1941K  slkor
2sk3018w.pdf

2SK3018W
2SK3018W

2SK3018WN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 30VDS I 300mAD R ( at V =10V) 8.0ohmDS(ON) GS R ( at V =4.5V) 13.0ohmDS(ON) GS ESD Protected Up to 2.5KV (HBM)General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low

 ..4. Size:387K  cn shikues
2sk3018w.pdf

2SK3018W
2SK3018W

2SK3018WN-channel MOSFET FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipmentLow voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted)= 25C unless otherwise noted) MOSFET ELECTRICAL CHARACT

 0.1. Size:467K  willas
2sk3018wt1.pdf

2SK3018W
2SK3018W

FM120-M WILLAS2SK3018WT1THRU SOT-323 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better rMOSFET N-channel everse leakage current and thermal resistance.SOD-123H Low profile surface mounted applicat

 0.2. Size:311K  lrc
l2sk3018wt1g s-l2sk3018wt1g.pdf

2SK3018W
2SK3018W

L2SK3018WT1GS-L2SK3018WT1GN-channel MOSFET100 mA, 30 V1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low on-resistance.Drain (3)Fast switching sp

 0.3. Size:97K  lrc
l2sk3018wt1g.pdf

2SK3018W
2SK3018W

LESHAN RADIO COMPANY, LTD.Silicon N-channel MOSFETL2SK3018WT1G100 mA, 30 V3 Features 1) Low on-resistance. 12) Fast switching speed. 23) Low voltage drive (2.5V) makes this device ideal for portable equipment.4) Easily designed drive circuits. SC-705) Easy to parallel. We declare that the material of product compliance with RoHS requirements.N - ChannelMAX

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