8N60F Todos los transistores

 ..1. Size:748K  wietron
 8n60p 8n60f.pdf

8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 8 AMPERES DRAIN SOURCE VOLTAGE Description 600 VOLTAGE The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually

 ..2. Size:3013K  goford
 8n60 8n60f.pdf

GOFORD 8N60/8N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 600V 1.2 7.5A This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active

 0.1. Size:616K  1
 jcs8n60s jcs8n60b jcs8n60c jcs8n60f.pdf

N R N-CHANNEL MOSFET JCS8N60 Package MAIN CHARACTERISTICS 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V 54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

 0.2. Size:382K  kec
 kp8n60f.pdf

KP8N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli

 0.3. Size:1084K  jilin sino
 jcs8n60vc jcs8n60rc jcs8n60bc jcs8n60sc jcs8n60cc jcs8n60fc.pdf

N R N-CHANNEL MOSFET JCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.6 @Vgs=10V Qg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATU

 0.4. Size:809K  jilin sino
 jcs8n60bb jcs8n60sb jcs8n60cb jcs8n60fb.pdf

N R N-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

 0.5. Size:837K  jilin sino
 jcs8n60f.pdf

 0.6. Size:285K  cystek
 mtn8n60fp.pdf

Spec. No. C409FP-A Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2012.01.13 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDSON(TYP) 1.08 MTN8N60FP ID 7.5A Description The MTN8N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

 0.7. Size:352K  crhj
 cs8n60f a9h.pdf

Silicon N-Channel Power MOSFET R CS8N60F A9H General Description VDSS 600 V CS8N60F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.8. Size:126K  jdsemi
 cm8n60f.pdf

R CM8N60F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 1

 0.9. Size:2119K  kexin
 kx8n60f.pdf

DIP Type MOSFET N-Channel MOSFET KX8N60F Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features VDS (V) = 600V ID = 7.5 A (VGS = 10V) RDS(ON) 1.2 (VGS = 10V) 0.20 2.76 Low gate charge 100% avalanche tested 1.47max 0.20 0.50 0.20 0.80 2.54typ 2.54typ Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 0.10. Size:433K  silan
 svf8n60t svf8n60f.pdf

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

 0.11. Size:319K  silan
 svfp18n60fjd.pdf

 0.12. Size:336K  silan
 svf8n60f.pdf

SVF8N60F 8A 600V N 2 SVF8N60F N MOS F-CellTM VDMOS 1 3

 0.13. Size:2681K  citcorp
 cs8n60fa9h.pdf

CS8N60FA9H 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Epo

 0.14. Size:238K  lzg
 cs8n60f.pdf

BRF8N60(CS8N60F) N-Channel MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 )

 0.15. Size:321K  ubiq
 qm08n60f.pdf

QM08N60F 1 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM08N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 1.0 8A most of the synchronous buck converter applications . Applications The QM08N60F meet the RoHS and

 0.16. Size:673K  way-on
 wml28n60f2 wmk28n60f2 wmn28n60f2 wmm28n60f2 wmj28n60f2.pdf

WML28N60F2, WM F2 MK28N60F WMN2 N60F2, WM F2 28N60F2, WMM28N MJ28N60F 600V 0.15 S T V Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa body ET fferin

 0.17. Size:232K  wuxi china
 cs8n60fa9h.pdf

Silicon N-Channel Power MOSFET R CS8N60F A9H General Description VDSS 600 V CS8N60F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.18. Size:443K  convert
 cs8n60f cs8n60p cs8n60u cs8n60d cs8n65f-b.pdf

CS8N60F,CS8N60P, nvert Suzhou Convert Semiconductor Co ., Ltd. CS8N60U,CS8N60D,CS8N65F-B 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS

 0.19. Size:436K  convert
 cs8n60f cs8n60p cs8n60u cs8n60d.pdf

nvert CS8N60F,CS8N60P,CS8N60U,CS8N60D Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS8N60F TO-220F

 0.20. Size:2461K  first semi
 fir8n60fg.pdf

FIR8N60FG 600V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=25.9nC (Typ.). BVDSS=600V,ID=7A RDS(on) 1.2 (Max) @VG=10V G D S 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly

 0.21. Size:975K  cn hmsemi
 hms8n60 hms8n60f hms8n60d.pdf

HMS8N60D, HMS8N60, HMS8N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power

 0.22. Size:583K  cn fx-semi
 fxn8n60f.pdf

FuXin Semiconductor Co., Ltd. FXN8N60F Series Rev.A General Description Features The FXN8N60F uses advanced Silicon s MOSFET Technology, which V = 600V DS provides high performance in on-state resistance, fast switching ID = 8A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 0.23. Size:405K  cn haohai electr
 h8n60p h8n60f.pdf

8N60 Series N-Channel MOSFET 7.5A, 600V, N H FQP8N60C H8N60P P TO-220AB 8N60 HAOHAI 50Pcs 1000Pcs 5000Pcs FQPF8N60C H8N60F F TO-220FP 8N60 Series Pin Assignment Features ID=7.5A Originative New Design

 0.24. Size:246K  inchange semiconductor
 kp8n60f.pdf