8N60F MOSFET. Datasheet pdf. Equivalent

8N60Surface Mount N-Channel Power MOSFETDRAIN CURRENTP b Lead(Pb)-Free8 AMPERESDRAIN SOURCE VOLTAGEDescription:600 VOLTAGEThe WEITRON 8N60 is a high voltage and high current powerMOSFET, designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and havea high rugged avalanche characteristics. This power MOSFET isusually

GOFORD8N60/8N60F600V N-Channel MOSFETGENERAL DESCRIPTIONVDSS RDS(ON) IDThis Power MOSFET is produced usingadvanced planar stripe DMOS technology.600V 1.2 7.5AThis latest technology has been especiallydesigned to minimize on-state resistance,Have a high rugged avalanchecharacteristics.These devices are well suitedfor high efficiency switched mode powersupplies, active

N RN-CHANNEL MOSFETJCS8N60 Package MAIN CHARACTERISTICS 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V 54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

KP8N60FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppli

N RN-CHANNEL MOSFET JCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.6 @Vgs=10VQg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATU

N RN-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

N RN-CHANNEL MOSFETJCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.3 @Vgs=10VQg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES

Spec. No. : C409FP-A Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2012.01.13 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDSON(TYP) : 1.08 MTN8N60FP ID : 7.5A Description The MTN8N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

Silicon N-Channel Power MOSFET R CS8N60F A9H General Description VDSS 600 V CS8N60F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

RCM8N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 1

DIP Type MOSFETN-Channel MOSFET KX8N60FUnit: mmTO-220F0.200.200.202.540.200.70 Features VDS (V) = 600V ID = 7.5 A (VGS = 10V) RDS(ON) 1.2 (VGS = 10V)0.202.76 Low gate charge 100% avalanche tested1.47max0.200.500.200.802.54typ2.54typ Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

SVFP18N60FJD 18A, 600V N 2SVFP18N60FJD N MOS F-CellTM VDMOS 1 3

SVF8N60F 8A600V N 2SVF8N60F N MOS F-CellTM VDMOS 1 3

CS8N60FA9H600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Epo

BRF8N60(CS8N60F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

QM08N60F 1 2011-11-15 - 1 -N-Ch 600V Fast Switching MOSFETsGeneral Description Product SummeryThe QM08N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 1.0 8Amost of the synchronous buck converterapplications . Applications The QM08N60F meet the RoHS and

WML28N60F2, WM F2 MK28N60FWMN2 N60F2, WM F2 28N60F2, WMM28N MJ28N60F 600V 0.15 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET fferin

Silicon N-Channel Power MOSFET R CS8N60F A9H General Description VDSS 600 V CS8N60F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

CS8N60F,CS8N60P, nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N60U,CS8N60D,CS8N65F-B600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS

nvertCS8N60F,CS8N60P,CS8N60U,CS8N60DSuzhou Convert Semiconductor Co ., Ltd.600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N60F TO-220F

FIR8N60FG600V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=25.9nC (Typ.). BVDSS=600V,ID=7A RDS(on) : 1.2 (Max) @VG=10VG D S 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly

HMS8N60D, HMS8N60, HMS8N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power

8N60 SeriesN-Channel MOSFET7.5A, 600V, N H FQP8N60C H8N60P P: TO-220AB8N60 HAOHAI 50Pcs 1000Pcs 5000PcsFQPF8N60C H8N60F F: TO-220FP8N60 Series Pin AssignmentFeaturesID=7.5AOriginative New Design

isc N-Channel MOSFET Transistor KP8N60FFEATURESStatic drain-source on-resistance:RDS(on) 0.58Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for active power factor correction and switching modePower suppliesABSOLUTE MAXIMUM RATINGS(T =25