FDB6035AL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDB6035AL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 48 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO263AB

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FDB6035AL datasheet

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fdp6035al fdb6035al.pdf pdf_icon

FDB6035AL

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

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fdp6035l fdb6035l.pdf pdf_icon

FDB6035AL

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 V RDS(ON) = 0.019 @ VGS=4.5 V. field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very Low gate charge (typic

 8.1. Size:408K  fairchild semi
fdp603al fdb603al.pdf pdf_icon

FDB6035AL

April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 33 A, 30 V. RDS(ON) = 0.022 @ VGS=10 V RDS(ON) = 0.036 @ VGS=4.5 V. effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density Critica

 8.2. Size:94K  fairchild semi
fdp6030l fdb6030l.pdf pdf_icon

FDB6035AL

August 2003 FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 17 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electr

Otros transistores... AO3423B, AS2306, FDB4020P, FDB4030L, FDB5680, FDB5690, FDB6030BL, FDB6030L, AO3401, FDB6035L, FDB603AL, FDB6670AL, FDB7030BL, FDB7030L, FDB7045L, FDB8030L, AS3401