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FDB6035AL Spec and Replacement


   Type Designator: FDB6035AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO263AB

 FDB6035AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB6035AL Specs

 ..1. Size:192K  fairchild semi
fdp6035al fdb6035al.pdf pdf_icon

FDB6035AL

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth... See More ⇒

 7.1. Size:407K  fairchild semi
fdp6035l fdb6035l.pdf pdf_icon

FDB6035AL

April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 58 A, 30 V. RDS(ON) = 0.011 @ VGS=10 V RDS(ON) = 0.019 @ VGS=4.5 V. field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very Low gate charge (typic... See More ⇒

 8.1. Size:408K  fairchild semi
fdp603al fdb603al.pdf pdf_icon

FDB6035AL

April 1998 FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 33 A, 30 V. RDS(ON) = 0.022 @ VGS=10 V RDS(ON) = 0.036 @ VGS=4.5 V. effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density Critica... See More ⇒

 8.2. Size:94K  fairchild semi
fdp6030l fdb6030l.pdf pdf_icon

FDB6035AL

August 2003 FDP6030L/FDB6030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 48 A, 30 V RDS(ON) = 13 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 17 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electr... See More ⇒

Detailed specifications: AO3423B , AS2306 , FDB4020P , FDB4030L , FDB5680 , FDB5690 , FDB6030BL , FDB6030L , AO3401 , FDB6035L , FDB603AL , FDB6670AL , FDB7030BL , FDB7030L , FDB7045L , FDB8030L , AS3401 .

History: FDB603AL | DSD040N08N3A | SML80B12

Keywords - FDB6035AL MOSFET specs

 FDB6035AL cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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