WTM2310A Todos los transistores

WTM2310A N-Channel Enhancement 3 DRAIN Mode Power MOSFET DRAIN CURRENT 5.0 AMPERES P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE 1 60 VOLTAGE GATE Features 2 SOURCE * Simple Drive Requirement. * Super High Density Cell Design for Extremely Low RDS(ON). 1 2 3 1. GATE 2. DRAIN 3. SOURCE SOT-89 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit VDS V D

WTM2302 N-Channel Enhancement Mode Power MOSFET Description The WTM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = 20V, lD = 2.6A R

WTM2300 N-Channel Enhancement Mode Power MOSFET Description The WTM2300 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = 20V, lD = 6A R

WTM2306 N-Channel Enhancement Mode Power MOSFET Description The WTM2306 uses advanced trench technology to provide excellent R , This device is suitable for use as a DS(ON) battery protection or in other switching application. Features V DS = 30V, lD = 3.6A R

WTM2301 P-Channel Enhancement Mode Power MOSFET Description The WTM2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = -20V, lD = -3A R

WTM2305 P-Channel Enhancement Mode Power MOSFET Description The WTM2305 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = -20V, lD = -4.1A R