Справочник MOSFET. WTM2310A

 

WTM2310A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WTM2310A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 42 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm
   Тип корпуса: SOT89

 Аналог (замена) для WTM2310A

 

 

WTM2310A Datasheet (PDF)

 ..1. Size:758K  wietron
 wtm2310a.pdf

WTM2310A WTM2310A

WTM2310AN-Channel Enhancement 3 DRAINMode Power MOSFET DRAIN CURRENT5.0 AMPERESP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE160 VOLTAGEGATEFeatures:2 SOURCE* Simple Drive Requirement.* Super High Density Cell Design for Extremely Low RDS(ON).1231. GATE2. DRAIN3. SOURCESOT-89Maximum Ratings (TA=25C Unless Otherwise Specified)Rating Symbol Value UnitVDS VD

 9.1. Size:762K  wpmtek
 wtm2302.pdf

WTM2310A WTM2310A

WTM2302N-Channel Enhancement Mode Power MOSFETDescription The WTM2302 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 2.6AR

 9.2. Size:730K  wpmtek
 wtm2300.pdf

WTM2310A WTM2310A

WTM2300N-Channel Enhancement Mode Power MOSFETDescription The WTM2300 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 6AR

 9.3. Size:782K  wpmtek
 wtm2306.pdf

WTM2310A WTM2310A

WTM2306N-Channel Enhancement Mode Power MOSFETDescription The WTM2306 uses advanced trench technology to provideexcellent R , This device is suitable for use as aDS(ON)battery protection or in other switching application.Features V DS = 30V, lD = 3.6AR

 9.4. Size:718K  wpmtek
 wtm2301.pdf

WTM2310A WTM2310A

WTM2301P-Channel Enhancement Mode Power MOSFET Description The WTM2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = -20V, lD = -3AR

 9.5. Size:742K  wpmtek
 wtm2305.pdf

WTM2310A WTM2310A

WTM2305P-Channel Enhancement Mode Power MOSFET Description The WTM2305 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = -20V, lD = -4.1AR

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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