FDB7030BL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB7030BL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 440 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: TO263AB
- Selección de transistores por parámetros
FDB7030BL Datasheet (PDF)
fdp7030bl fdb7030bl.pdf

July 1998 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed60 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, specifically to improve the overall efficiency of DC/DCRDS(ON) = 0.0120 @ VGS = 4.5 V.converters using either synchronous or conventional Critical DC electrical parameters spec
fdp7030bl fdb7030bl .pdf

October 2003FDP7030BL/FDB7030BLN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 60 A, 30 V RDS(ON) = 9 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 12 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC elec
fdp7030bl fdb7030bl.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb7030l l86z.pdf

June 2003FDP7030L / FDB7030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 80A, 30 V RDS(ON) = 7 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 10 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electric
Otros transistores... FDB5680 , FDB5690 , FDB6030BL , FDB6030L , FDB6035AL , FDB6035L , FDB603AL , FDB6670AL , IRFP450 , FDB7030L , FDB7045L , FDB8030L , AS3401 , FDC5612 , FDC6301N , FDC6302P , FDC6303N .
History: SVSP14N60TD2 | MEE7816AS-G | IXTU2N80P
History: SVSP14N60TD2 | MEE7816AS-G | IXTU2N80P



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
c3203 transistor | irfp450 equivalent | 2sb649 | 2sb324 transistor | b754 transistor | 2sc828 equivalent | 4843ns | 2sc1318 datasheet