FDB7030BL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDB7030BL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 440 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: TO263AB
- подбор MOSFET транзистора по параметрам
FDB7030BL Datasheet (PDF)
fdp7030bl fdb7030bl.pdf

July 1998 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed60 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, specifically to improve the overall efficiency of DC/DCRDS(ON) = 0.0120 @ VGS = 4.5 V.converters using either synchronous or conventional Critical DC electrical parameters spec
fdp7030bl fdb7030bl .pdf

October 2003FDP7030BL/FDB7030BLN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 60 A, 30 V RDS(ON) = 9 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 12 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC elec
fdp7030bl fdb7030bl.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb7030l l86z.pdf

June 2003FDP7030L / FDB7030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET has been 80A, 30 V RDS(ON) = 7 m @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 10 m @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electric
Другие MOSFET... FDB5680 , FDB5690 , FDB6030BL , FDB6030L , FDB6035AL , FDB6035L , FDB603AL , FDB6670AL , IRFP450 , FDB7030L , FDB7045L , FDB8030L , AS3401 , FDC5612 , FDC6301N , FDC6302P , FDC6303N .
History: MCH3484 | DMN30H4D0L
History: MCH3484 | DMN30H4D0L



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