FDB7030BL. Аналоги и основные параметры
Наименование производителя: FDB7030BL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 440 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: TO263AB
Аналог (замена) для FDB7030BL
- подборⓘ MOSFET транзистора по параметрам
FDB7030BL даташит
fdp7030bl fdb7030bl.pdf
July 1998 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 60 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.0120 @ VGS = 4.5 V. converters using either synchronous or conventional Critical DC electrical parameters spec
fdp7030bl fdb7030bl .pdf
October 2003 FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 60 A, 30 V RDS(ON) = 9 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 12 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC elec
fdp7030bl fdb7030bl.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdb7030l l86z.pdf
June 2003 FDP7030L / FDB7030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been 80A, 30 V RDS(ON) = 7 m @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 10 m @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electric
Другие IGBT... FDB5680, FDB5690, FDB6030BL, FDB6030L, FDB6035AL, FDB6035L, FDB603AL, FDB6670AL, SPP20N60C3, FDB7030L, FDB7045L, FDB8030L, AS3401, FDC5612, FDC6301N, FDC6302P, FDC6303N
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUP060N055 | AUP056N10 | AUP056N08BGL | AUP052N085 | AUP045N12 | AUP039N10 | AUP034N10 | AUP034N06 | AUP033N08BG | AUP026N085 | AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10
Popular searches
c3203 transistor | irfp450 equivalent | 2sb649 | 2sb324 transistor | b754 transistor | 2sc828 equivalent | 4843ns | 2sc1318 datasheet





