CEB02N65A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEB02N65A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 41 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 1.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 50 pF

Resistencia drenaje-fuente RDS(on): 10.5 Ohm

Empaquetado / Estuche: TO263

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CEB02N65A Datasheet (PDF)

1.1. cep02n65a ceb02n65a cef02n65a.pdf Size:391K _cet

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5? 1.3A 10V CEB02N65A 650V 10.5? 1.3A 10V CEF02N65A 650V 10.5? 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES

2.1. cep02n65g ceb02n65g cef02n65g.pdf Size:393K _cet

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65G 650V 5.5? 2A 10V CEB02N65G 650V 5.5? 2A 10V CEF02N65G 650V 5.5? 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK)

3.1. cep02n6g ceb02n6g cef02n6g.pdf Size:393K _cet

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5? 2.2A 10V CEB02N6G 600V 5? 2.2A 10V CEF02N6G 600V 5? 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220

3.2. cep02n6a ceb02n6a cef02n6a.pdf Size:354K _cet

CEP02N6A/CEB02N6A CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6A 600V 8.5? 1.4A 10V CEB02N6A 600V 8.5? 1.4A 10V CEF02N6A 600V 8.5? 1.4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK)

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

Liste

Recientemente añadidas las descripciónes de los transistores: