CEB02N65A Todos los transistores

 

CEB02N65A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEB02N65A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 10.5 Ohm
   Paquete / Cubierta: TO263
 

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Principales características: CEB02N65A

 ..1. Size:391K  cet
 cep02n65a ceb02n65a cef02n65a.pdf pdf_icon

CEB02N65A

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5 1.3A 10V CEB02N65A 650V 10.5 1.3A 10V CEF02N65A 650V 10.5 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES C

 6.1. Size:342K  1
 cef02n65d cep02n65d ceb02n65d.pdf pdf_icon

CEB02N65A

CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65D 650V 6.9 2A 10V CEB02N65D 650V 6.9 2A 10V CEF02N65D 650V 6.9 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF S

 6.2. Size:393K  cet
 cep02n65g ceb02n65g cef02n65g.pdf pdf_icon

CEB02N65A

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65G 650V 5.5 2A 10V CEB02N65G 650V 5.5 2A 10V CEF02N65G 650V 5.5 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(

 7.1. Size:393K  cet
 cep02n6g ceb02n6g cef02n6g.pdf pdf_icon

CEB02N65A

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5 2.2A 10V CEB02N6G 600V 5 2.2A 10V CEF02N6G 600V 5 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK

MOSTRAR MÁS

Otros transistores... WTN9973 , WTU1333 , WTX1012 , WTX7002 , CEA6200 , CEA6426 , CEB01N65 , CEB01N6G , IRF3205 , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 , CEB04N6 , CEB04N65 .

 

 
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