All MOSFET. CEB02N65A Datasheet

 

CEB02N65A Datasheet and Replacement


   Type Designator: CEB02N65A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
   Package: TO263
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CEB02N65A Datasheet (PDF)

 ..1. Size:391K  cet
 cep02n65a ceb02n65a cef02n65a.pdf pdf_icon

CEB02N65A

CEP02N65A/CEB02N65ACEF02N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP02N65A 650V 10.5 1.3A 10VCEB02N65A 650V 10.5 1.3A 10VCEF02N65A 650V 10.5 1.3A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES C

 6.1. Size:342K  1
 cef02n65d cep02n65d ceb02n65d.pdf pdf_icon

CEB02N65A

CEP02N65D/CEB02N65D CEF02N65DPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N65D 650V 6.9 2A 10VCEB02N65D 650V 6.9 2A 10VCEF02N65D 650V 6.9 2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF S

 6.2. Size:393K  cet
 cep02n65g ceb02n65g cef02n65g.pdf pdf_icon

CEB02N65A

CEP02N65G/CEB02N65GCEF02N65GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N65G 650V 5.5 2A 10VCEB02N65G 650V 5.5 2A 10VCEF02N65G 650V 5.5 2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(

 7.1. Size:393K  cet
 cep02n6g ceb02n6g cef02n6g.pdf pdf_icon

CEB02N65A

CEP02N6G/CEB02N6GCEF02N6GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N6G 600V 5 2.2A 10VCEB02N6G 600V 5 2.2A 10VCEF02N6G 600V 5 2.2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK

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History: TK2P60D | IRFBG20

Keywords - CEB02N65A MOSFET datasheet

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