All MOSFET. CEB02N65A Datasheet

 

CEB02N65A MOSFET. Datasheet pdf. Equivalent

Type Designator: CEB02N65A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 41 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1.3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 10.5 Ohm

Package: TO263

CEB02N65A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEB02N65A Datasheet (PDF)

1.1. cep02n65a ceb02n65a cef02n65a.pdf Size:391K _cet

CEB02N65A CEB02N65A

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5Ω 1.3A 10V CEB02N65A 650V 10.5Ω 1.3A 10V CEF02N65A 650V 10.5Ω 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES C

2.1. cep02n65g ceb02n65g cef02n65g.pdf Size:393K _cet

CEB02N65A CEB02N65A

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65G 650V 5.5Ω 2A 10V CEB02N65G 650V 5.5Ω 2A 10V CEF02N65G 650V 5.5Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(

 3.1. cep02n6a ceb02n6a cef02n6a.pdf Size:354K _cet

CEB02N65A CEB02N65A

CEP02N6A/CEB02N6A CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6A 600V 8.5Ω 1.4A 10V CEB02N6A 600V 8.5Ω 1.4A 10V CEF02N6A 600V 8.5Ω 1.4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(

3.2. cep02n6g ceb02n6g cef02n6g.pdf Size:393K _cet

CEB02N65A CEB02N65A

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5Ω 2.2A 10V CEB02N6G 600V 5Ω 2.2A 10V CEF02N6G 600V 5Ω 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK

Datasheet: WTN9973 , WTU1333 , WTX1012 , WTX7002 , CEA6200 , CEA6426 , CEB01N65 , CEB01N6G , IRFZ44N , CEB02N65G , CEB02N6A , CEB02N6G , CEB02N7G , CEB02N9 , CEB03N8 , CEB04N6 , CEB04N65 .

 

 
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