CEB02N7G Todos los transistores

 

CEB02N7G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEB02N7G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 700 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 12.5 nS

Conductancia de drenaje-sustrato (Cd): 55 pF

Resistencia drenaje-fuente RDS(on): 6.75 Ohm

Empaquetado / Estuche: TO263

Búsqueda de reemplazo de MOSFET CEB02N7G

 

CEB02N7G Datasheet (PDF)

1.1. cep02n7g ceb02n7g cef02n7g.pdf Size:617K _cet

CEB02N7G
CEB02N7G

CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N7G 700V 6.75Ω 2A 10V CEB02N7G 700V 6.75Ω 2A 10V CEF02N7G 700V 6.75Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-

4.1. cep02n65a ceb02n65a cef02n65a.pdf Size:391K _cet

CEB02N7G
CEB02N7G

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5Ω 1.3A 10V CEB02N65A 650V 10.5Ω 1.3A 10V CEF02N65A 650V 10.5Ω 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES C

4.2. cep02n6a ceb02n6a cef02n6a.pdf Size:354K _cet

CEB02N7G
CEB02N7G

CEP02N6A/CEB02N6A CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6A 600V 8.5Ω 1.4A 10V CEB02N6A 600V 8.5Ω 1.4A 10V CEF02N6A 600V 8.5Ω 1.4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(

 4.3. cep02n65g ceb02n65g cef02n65g.pdf Size:393K _cet

CEB02N7G
CEB02N7G

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65G 650V 5.5Ω 2A 10V CEB02N65G 650V 5.5Ω 2A 10V CEF02N65G 650V 5.5Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(

4.4. cep02n6g ceb02n6g cef02n6g.pdf Size:393K _cet

CEB02N7G
CEB02N7G

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5Ω 2.2A 10V CEB02N6G 600V 5Ω 2.2A 10V CEF02N6G 600V 5Ω 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK

 4.5. cep02n9 ceb02n9 cef02n9.pdf Size:391K _cet

CEB02N7G
CEB02N7G

CEP02N9/CEB02N9 CEF02N9 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N9 900V 6.8Ω 2.6A 10V CEB02N9 900V 6.8Ω 2.6A 10V CEF02N9 900V 6.8Ω 2.6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


CEB02N7G
  CEB02N7G
  CEB02N7G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: 12N65KG-TQ | 12N65KG-TF | 12N65KG-TA | 12N65KL-TQ | 12N65KL-TA | IRFU430A | IRFSL7787 | IRFSL7762 | IRFSL4510 | IRFP4905 | IRFP3207Z | IRFL3713S | IPI80CN10N | IPI600N25N3 | IPI530N15N3 |

 

 

 
Back to Top