All MOSFET. CEB02N7G Datasheet

 

CEB02N7G MOSFET. Datasheet pdf. Equivalent

Type Designator: CEB02N7G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 12.5 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 6.75 Ohm

Package: TO263

CEB02N7G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEB02N7G Datasheet (PDF)

0.1. cep02n7g ceb02n7g cef02n7g.pdf Size:617K _cet

CEB02N7G
CEB02N7G

CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N7G 700V 6.75Ω 2A 10V CEB02N7G 700V 6.75Ω 2A 10V CEF02N7G 700V 6.75Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-

8.1. cep02n65a ceb02n65a cef02n65a.pdf Size:391K _cet

CEB02N7G
CEB02N7G

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5Ω 1.3A 10V CEB02N65A 650V 10.5Ω 1.3A 10V CEF02N65A 650V 10.5Ω 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES C

8.2. cep02n6a ceb02n6a cef02n6a.pdf Size:354K _cet

CEB02N7G
CEB02N7G

CEP02N6A/CEB02N6A CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6A 600V 8.5Ω 1.4A 10V CEB02N6A 600V 8.5Ω 1.4A 10V CEF02N6A 600V 8.5Ω 1.4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(

 8.3. cep02n65g ceb02n65g cef02n65g.pdf Size:393K _cet

CEB02N7G
CEB02N7G

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65G 650V 5.5Ω 2A 10V CEB02N65G 650V 5.5Ω 2A 10V CEF02N65G 650V 5.5Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(

8.4. cep02n6g ceb02n6g cef02n6g.pdf Size:393K _cet

CEB02N7G
CEB02N7G

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5Ω 2.2A 10V CEB02N6G 600V 5Ω 2.2A 10V CEF02N6G 600V 5Ω 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK

 8.5. cep02n9 ceb02n9 cef02n9.pdf Size:391K _cet

CEB02N7G
CEB02N7G

CEP02N9/CEB02N9 CEF02N9 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N9 900V 6.8Ω 2.6A 10V CEB02N9 900V 6.8Ω 2.6A 10V CEF02N9 900V 6.8Ω 2.6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES

Datasheet: CEA6200 , CEA6426 , CEB01N65 , CEB01N6G , CEB02N65A , CEB02N65G , CEB02N6A , CEB02N6G , BS170 , CEB02N9 , CEB03N8 , CEB04N6 , CEB04N65 , CEB04N7G , CEB05N65 , CEB06N7 , CEB07N65 .

 

 
Back to Top