CEB13N5A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEB13N5A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 185 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de CEB13N5A MOSFET
CEB13N5A Datasheet (PDF)
cep13n5a ceb13n5a cef13n5a.pdf

CEP13N5A/CEB13N5ACEF13N5APRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP13N5A 500V 0.48 13A 10VCEB13N5A 500V 0.48 13A 10VCEF13N5A 500V 0.48 13A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES C
cep13n5 ceb13n5 cef13n5.pdf

CEP13N5/CEB13N5 CEF13N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP13N5 500V 0.48 13A 10VCEB13N5 500V 0.48 13A 10VCEF13N5 500V 0.48 13A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES
cep13n10 ceb13n10.pdf

CEP13N10/CEB13N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 12.8A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
cep13n10l ceb13n10l.pdf

CEP13N10L/CEB13N10LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 12.8A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS
Otros transistores... CEP04N6 , CEP04N65 , CEP04N7G , CEP05N65 , CEP06N7 , CEP07N65 , CEP07N65A , CEP07N7 , AON7506 , CEF13N5A , CEP13N5A , CEB08N8 , CEF08N8 , CEP08N8 , CEB20A03 , CEP20A03 , CEB14G04 .
History: HUF75345S3S | IXFH70N15 | IPD80R3K3P7 | FB180SA10 | CEP83A3 | IRFZ44N | BUK966R5-60E
History: HUF75345S3S | IXFH70N15 | IPD80R3K3P7 | FB180SA10 | CEP83A3 | IRFZ44N | BUK966R5-60E



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