CEB13N5A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEB13N5A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 208 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 31 nC

Tiempo de elevación (tr): 18 nS

Conductancia de drenaje-sustrato (Cd): 185 pF

Resistencia drenaje-fuente RDS(on): 0.48 Ohm

Empaquetado / Estuche: TO263

Búsqueda de reemplazo de MOSFET CEB13N5A

CEB13N5A Datasheet (PDF)

1.1. cep13n5a ceb13n5a cef13n5a.pdf Size:435K _cet

CEP13N5A/CEB13N5A CEF13N5A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5A 500V 0.48? 13A 10V CEB13N5A 500V 0.48? 13A 10V CEF13N5A 500V 0.48? 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES

3.1. cep13n5 ceb13n5 cef13n5.pdf Size:412K _cet

CEP13N5/CEB13N5 CEF13N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5 500V 0.48? 13A 10V CEB13N5 500V 0.48? 13A 10V CEF13N5 500V 0.48? 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(D

4.1. cep13n10l ceb13n10l.pdf Size:657K _cet

CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175m? @VGS = 10V. RDS(ON) = 185m? @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 2

4.2. cep13n10 ceb13n10.pdf Size:348K _cet

CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Par

Otros transistores... CEP04N6 , CEP04N65 , CEP04N7G , CEP05N65 , CEP06N7 , CEP07N65 , CEP07N65A , CEP07N7 , 2N7002 , CEF13N5A , CEP13N5A , CEB08N8 , CEF08N8 , CEP08N8 , CEB20A03 , CEP20A03 , CEB14G04 .

Liste

Recientemente añadidas las descripciónes de los transistores: