CEB13N5A Todos los transistores

 

CEB13N5A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEB13N5A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm

Encapsulados: TO263

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CEB13N5A datasheet

 ..1. Size:435K  cet
 cep13n5a ceb13n5a cef13n5a.pdf pdf_icon

CEB13N5A

CEP13N5A/CEB13N5A CEF13N5A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5A 500V 0.48 13A 10V CEB13N5A 500V 0.48 13A 10V CEF13N5A 500V 0.48 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES C

 7.1. Size:412K  cet
 cep13n5 ceb13n5 cef13n5.pdf pdf_icon

CEB13N5A

CEP13N5/CEB13N5 CEF13N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5 500V 0.48 13A 10V CEB13N5 500V 0.48 13A 10V CEF13N5 500V 0.48 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES

 8.1. Size:348K  cet
 cep13n10 ceb13n10.pdf pdf_icon

CEB13N5A

CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 8.2. Size:657K  cet
 cep13n10l ceb13n10l.pdf pdf_icon

CEB13N5A

CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS

MOSTRAR MÁS

Otros transistores... CEP04N6 , CEP04N65 , CEP04N7G , CEP05N65 , CEP06N7 , CEP07N65 , CEP07N65A , CEP07N7 , IRFB3607 , CEF13N5A , CEP13N5A , CEB08N8 , CEF08N8 , CEP08N8 , CEB20A03 , CEP20A03 , CEB14G04 .

 

 

 

 

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