CEB13N5A Specs and Replacement

Type Designator: CEB13N5A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TO263

CEB13N5A substitution

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CEB13N5A datasheet

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 cep13n5a ceb13n5a cef13n5a.pdf pdf_icon

CEB13N5A

CEP13N5A/CEB13N5A CEF13N5A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5A 500V 0.48 13A 10V CEB13N5A 500V 0.48 13A 10V CEF13N5A 500V 0.48 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES C... See More ⇒

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 cep13n5 ceb13n5 cef13n5.pdf pdf_icon

CEB13N5A

CEP13N5/CEB13N5 CEF13N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5 500V 0.48 13A 10V CEB13N5 500V 0.48 13A 10V CEF13N5 500V 0.48 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒

 8.1. Size:348K  cet
 cep13n10 ceb13n10.pdf pdf_icon

CEB13N5A

CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted... See More ⇒

 8.2. Size:657K  cet
 cep13n10l ceb13n10l.pdf pdf_icon

CEB13N5A

CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS... See More ⇒

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Detailed specifications: CEP04N6, CEP04N65, CEP04N7G, CEP05N65, CEP06N7, CEP07N65, CEP07N65A, CEP07N7, IRFB3607, CEF13N5A, CEP13N5A, CEB08N8, CEF08N8, CEP08N8, CEB20A03, CEP20A03, CEB14G04

Keywords - CEB13N5A MOSFET specs

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