CEB14G04 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CEB14G04
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 140 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 570 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de CEB14G04 MOSFET
CEB14G04 PDF Specs
cep14g04 ceb14g04.pdf
CEP14G04/CEB14G04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 140A, RDS(ON) = 3.6m @VGS = 10V. RDS(ON) = 6.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS... See More ⇒
cep14a04 ceb14a04.pdf
CEP14A04/CEB14A04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 180A, RDS(ON) = 5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise note... See More ⇒
cep140n10 ceb140n10.pdf
CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise... See More ⇒
cef14p20 cep14p20 ceb14p20.pdf
CEP14P20/CEB14P20 CEF14P20 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14P20 -200V 0.36 -13.5A -10V CEB14P20 -200V 0.36 -13.5A -10V CEF14P20 -200V 0.36 -13.5A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIE... See More ⇒
Otros transistores... CEB13N5A , CEF13N5A , CEP13N5A , CEB08N8 , CEF08N8 , CEP08N8 , CEB20A03 , CEP20A03 , TK10A60D , CEP14G04 , CEB15A03 , CEP15A03 , CEB14A04 , CEP14A04 , CEB140N10 , CEP140N10 , CEB16N10L .
History: CEB08N8
History: CEB08N8
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