All MOSFET. CEB14G04 Datasheet

 

CEB14G04 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEB14G04

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 140 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 50 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 570 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0036 Ohm

Package: TO263

CEB14G04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEB14G04 Datasheet (PDF)

1.1. cep14g04 ceb14g04.pdf Size:421K _cet

CEB14G04
CEB14G04

CEP14G04/CEB14G04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 140A, RDS(ON) = 3.6mΩ @VGS = 10V. RDS(ON) = 6.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS

5.1. cep140n10 ceb140n10.pdf Size:419K _cet

CEB14G04
CEB14G04

CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise

5.2. cep14n5 ceb14n5 cef14n5.pdf Size:435K _cet

CEB14G04
CEB14G04

CEP14N5/CEB14N5 CEF14N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14N5 500V 0.38Ω 14A 10V CEB14N5 500V 0.38Ω 14A 10V CEF14N5 500V 0.38Ω 14A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER

 5.3. cef14p20 cep14p20 ceb14p20.pdf Size:385K _cet

CEB14G04
CEB14G04

CEP14P20/CEB14P20 CEF14P20 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14P20 -200V 0.36Ω -13.5A -10V CEB14P20 -200V 0.36Ω -13.5A -10V CEF14P20 -200V 0.36Ω -13.5A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIE

5.4. cep14a04 ceb14a04.pdf Size:397K _cet

CEB14G04
CEB14G04

CEP14A04/CEB14A04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 180A, RDS(ON) = 5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise note

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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