CEP13N10L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEP13N10L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12.8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.175 Ohm

Encapsulados: TO220

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CEP13N10L datasheet

 ..1. Size:657K  cet
 cep13n10l ceb13n10l.pdf pdf_icon

CEP13N10L

CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS

 6.1. Size:348K  cet
 cep13n10 ceb13n10.pdf pdf_icon

CEP13N10L

CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 6.2. Size:302K  ncepower
 ncep13n10as.pdf pdf_icon

CEP13N10L

http //www.ncepower.com NCEP13N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP13N10AS uses Super Trench II technology that is VDS =100V,ID =10A uniquely optimized to provide the most efficient high frequency RDS(ON)=12m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=15m (typical) @ VGS=4.5V losses

 8.1. Size:435K  cet
 cep13n5a ceb13n5a cef13n5a.pdf pdf_icon

CEP13N10L

CEP13N5A/CEB13N5A CEF13N5A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP13N5A 500V 0.48 13A 10V CEB13N5A 500V 0.48 13A 10V CEF13N5A 500V 0.48 13A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES C

MOSTRAR MÁS

Otros transistores... CEP14A04, CEB140N10, CEP140N10, CEB16N10L, CEP16N10L, CEB16N10, CEP16N10, CEB13N10L, 20N50, CEB13N10, CEP13N10, CEB14N5, CEF14N5, CEP14N5, CEB13N5, CEP13N5, CEB12N5