All MOSFET. CEP13N10L Datasheet

 

CEP13N10L MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEP13N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 12.8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: TO220

 CEP13N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEP13N10L Datasheet (PDF)

 ..1. Size:657K  cet
 cep13n10l ceb13n10l.pdf

CEP13N10L CEP13N10L

CEP13N10L/CEB13N10LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 12.8A, RDS(ON) = 175m @VGS = 10V. RDS(ON) = 185m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS

 6.1. Size:348K  cet
 cep13n10 ceb13n10.pdf

CEP13N10L CEP13N10L

CEP13N10/CEB13N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 12.8A, RDS(ON) = 180m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 6.2. Size:302K  ncepower
 ncep13n10as.pdf

CEP13N10L CEP13N10L

http://www.ncepower.com NCEP13N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP13N10AS uses Super Trench II technology that is VDS =100V,ID =10A uniquely optimized to provide the most efficient high frequency RDS(ON)=12m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=15m (typical) @ VGS=4.5V losses

 8.1. Size:435K  cet
 cep13n5a ceb13n5a cef13n5a.pdf

CEP13N10L CEP13N10L

CEP13N5A/CEB13N5ACEF13N5APRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP13N5A 500V 0.48 13A 10VCEB13N5A 500V 0.48 13A 10VCEF13N5A 500V 0.48 13A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES C

 8.2. Size:412K  cet
 cep13n5 ceb13n5 cef13n5.pdf

CEP13N10L CEP13N10L

CEP13N5/CEB13N5 CEF13N5PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP13N5 500V 0.48 13A 10VCEB13N5 500V 0.48 13A 10VCEF13N5 500V 0.48 13A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIES

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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